Fabrication and characterization of low-loss TFMS on silicon substrate up to 220 GHz

Trend on Silicon Technologies for Millimetre-Wave Applications up to 220 GHz

“…13. Previous works have shown that the BCB layer thickness is a parameter that most influences the losses (Six et al, 2005), (Leung et al, 2002), (Prigent et al, 2004-a). Investigations were carried out so as to reduce these insertion losses.…”

“…Nevertheless, when designing future very high-selectivity filters for which the confinement of the electromagnetic field is a problem, the designer must keep in mind the packaging aspect. As grounded CPW lines are not a very convenient solution, three-dimensional technological solutions using, for instance, thin-or thick-film microstrip transmission lines appear to be equally well suited (Rius et al, 2000-b), (Six et al, 2001), (Aftanasar et al, 2001), (Warns et al, 1998), (Schnieder & Heinrich, 2001 …”

Design and Fabrication of Rf-Mems Switch for v-Band Reconfigurable Application

“…3) Next step consists in BCB deposition. A 300Å thin film of titanium is first evaporated in order to improve adhesion of BCB layer on gold [17]. 20-µm-thick BCB layer is then deposited.…”

Simulation of a wide band-stop filter on high-resistivity silicon (HRS) substrate

“…Due to high substrate loss it is a problem to fabricate useful traditional passive microwave components on such substrate. One of the solutions is to apply benzocyclobutene (BCB) to serve as the interface layer [2], [3]. BCB has a low dielectric loss and low dielectric constant.…”