Fabrication and Characterization of MoS2/h-BN and WS2/h-BN Heterostructures

Abstract

The general preparation method of large-area, continuous, uniform, and controllable vdW heterostructure materials is provided in this paper. To obtain the preparation of MoS2/h-BN and WS2/h-BN heterostructures, MoS2 and WS2 material are directly grown on the insulating h-BN substrate by atmospheric pressure chemical vapor deposition (APCVD) method, which does not require any intermediate transfer steps. The test characterization of MoS2/h-BN and WS2/h-BN vdW heterostructure materials can be accomplished by optical microscope, AFM, Raman and PL spectroscopy. The Raman peak signal of h-BN material is stronger when the h-BN film is thicker. Compared to the spectrum of MoS2 or WS2 material on SiO2/Si substrate, the Raman and PL spectrum peak positions of MoS2/h-BN heterostructure are blue-shifted, which is due to the presence of local strain, charged impurities and the vdW heterostructure interaction. Additionally, the PL spectrum of WS2 material shows the strong emission peak at 1.96 eV, while the full width half maximum (FWHM) is only 56 meV. The sharp emission peak indicates that WS2/h-BN heterostructure material has the high crystallinity and clean interface. In addition, the peak position and shape of IPM mode characteristic peak are not obvious, which can be explained by the Van der Waals interaction of WS2/h-BN heterostructure. From the above experimental results, the preparation method of heterostructure material is efficient and scalable, which can provide the important support for the subsequent application of TMDs/h-BN heterostructure in nanoelectronics and optoelectronics.

Two-Dimensional MoS2: Structural Properties, Synthesis Methods, and Regulation Strategies toward Oxygen Reduction

“…A variety of 2D materials have been found for electrocatalysis. Among heteroatomdoped carbon [14], layered metal hydroxide (LDH) [15], layered metal oxide [16], 2D metalorganic frameworks (2D-MOFs) [17], 2D covalent organic frameworks (2D-COFs) [18], graphite carbonitrides (g-C3N4) [19], hexagonal boron nitride (h-BN) [20], black phosphorous (BP) [21], MXenes [22], and 2D transition metal dichalcogenides (TMDs) [23][24][25], TMDs are a class of materials with great application prospects and basic research value. The chemical formula of TMDs is MX2, where M represents transition metal elements, including group IV (Ti, Zr, or Hf), group V (V, Nb, or Ta), group VI (Mo, W), group VII (Tc, Re), or group X (Pd, Pt), and X refers to a chalcogen atom (S, Se).…”

Magnetical Manipulation of Hyperbolic Phonon Polaritons in Twisted Double-Layers of Molybdenum Trioxide

“…There has been significant progress in natural vdW crystal and heterostructures, which are characterized by an anisotropic polaritonic response, leading to elliptical, hyperbolic, or biaxial polaritonic dispersions [ 10 , 11 ]. Different polaritonic modes in vdW materials have been discovered, such as plasmon polaritons in graphene, exciton polaritons in molybdenum diselenide ( ), phonon polaritons in hexagonal boron nitride (hBN), and [ 12 , 13 , 14 , 15 , 16 ]. Among these structures, PhPs with hyperbolicity in - are of particular interest, not only due to the strong field confinement, low losses, and long lifetimes, but also the natural in-plane anisotropic dispersion [ 7 , 9 , 17 , 18 , 19 , 20 ].…”

Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors

“…Hexagonal boron–nitride appears as an attractive alternative to HfO and ZrO to passivate 2D materials [ 16 ]. On one hand, it does not induce dangling bonds at the semiconductor–oxide interface.…”