Fabrication and characterization of n-Si/SiON/metal gate structure for future MOS technology

Rajput, Renu; Gupta, Rajive; Gupta, Rakesh; Khosla, Ajit; Vaid, Rakesh

doi:10.1007/s00542-017-3703-3

Cited by 2 publications

(1 citation statement)

References 29 publications

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“…However, its physical limitations and unacceptable leakage current levels calls for the requirement of materials having higher value of dielectric constant. Several high-k dielectrics such as Al2O3, HfO2, ZrO2, TiO2, and Ta2O5 have been extensively studied for the replacement of SiO2 [1][2][3][4][5][6][7]. Among them, ZrO2 is one of the most attractive candidates owing to its outstanding physical, chemical and electrical properties such as high melting point, good thermodynamic stability with silicon, high dielectric constant (k∼25), high refractive index, and higher band gap (~5.8 eV) [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO₂/SiON Gate Stack for Advanced CMOS Devices

Gupta¹,

Vaid²

2018

ECS Trans.

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Keeping in view the potential demands of 22 nm (and beyond) technology nodes for high-k dielectric materials, the device reliability was taken into consideration by selecting appropriate atomic scale deposition techniques and device characterization methods. This paper presents the fabrication of n-Si/ALD-ZrO2 gate stack with an ultra-thin silicon oxynitride (SiON) as an interfacial layer (IL). The problem of the gate leakage current has been resolved by post deposition annealing (PDA) of ZrO2 film ~ 11.63 nm in oxygen ambient on the silicon substrate followed by the pre-growth of SiON IL ~ 6.92 nm. The structural, morphological and film thickness studies have been performed by the characterization techniques such as XRD, AFM and FESEM respectively. Electrical characterizations such as capacitance-voltage (C-V) and current density-voltage (J-V) reveal the improved results for O2 annealed ZrO2 sample relative to the as-deposited ZrO2 sample in terms of suppressed gate leakage current (~2.8×10 -8 A/cm 2 ), increased dielectric constant (~ 33) and reduced effective oxide thickness (EOT~ 1.37 nm). O2 annealed ZrO2/SiON gate stack exhibits excellent results in terms of reduced EOT, reduced leakage current and increased dielectric constant relative to as-deposited ZrO2/SiON gate stack.

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Section: Introductionmentioning

confidence: 99%

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO₂/SiON Gate Stack for Advanced CMOS Devices

Gupta¹,

Vaid²

2018

ECS Trans.

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Reliability Analysis on TiN Gated NMOS Transistors

2021

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Compared to poly Si gate, metal gate has no gate depletions and experiences inversion capacitance gain, which makes an advantage for devices scaling. In this paper, we investigated the gate oxide leakage current and Time Dependent Dielectric Breakdown (TDDB) characteristics of TiN and poly Si electrodes with a 3.5 to 5 nm SiO2 dielectric thickness range. According to the Transmission Electron Microscope (TEM) analysis there is difference in oxide thickness. The SiO2 thickness of TiN gate electrode has been reduced by ~0.25 nm, considerably because of a scavenging effect. We normalized the reduced SiO2 thickness with an electrical oxide field, and there were no differences between the two electrodes in gate leakage current, accumulation breakdown voltage (BV), and accumulation TDDB lifetime. Therefore, we found the scavenging effect of TiN electrodes seems to affect little the leakage current and TDDB reliability of SiO2 dielectric. On the other hand, the BV and TDDB lifetime of TiN electrode in the inversion region are little bit better than that of the poly electrode. We think this differences are originated from the difference between TiN/SiO2 and poly Si/SiO2 interfaces.

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Fabrication and characterization of n-Si/SiON/metal gate structure for future MOS technology

Cited by 2 publications

References 29 publications

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO₂/SiON Gate Stack for Advanced CMOS Devices

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO₂/SiON Gate Stack for Advanced CMOS Devices

Reliability Analysis on TiN Gated NMOS Transistors

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Fabrication and characterization of n-Si/SiON/metal gate structure for future MOS technology

Cited by 2 publications

References 29 publications

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO2/SiON Gate Stack for Advanced CMOS Devices

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO2/SiON Gate Stack for Advanced CMOS Devices

Reliability Analysis on TiN Gated NMOS Transistors

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Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO₂/SiON Gate Stack for Advanced CMOS Devices

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO₂/SiON Gate Stack for Advanced CMOS Devices