Fabrication and characterization of native non-polar GaN substrates

Hanser, Drew; Liu, L.; Preble, E. A.; Udwary, K.; Paskova, T.; Evans, K. R.

doi:10.1016/j.jcrysgro.2008.06.029

Cited by 37 publications

(67 citation statements)

References 15 publications

(15 reference statements)

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“…(1) In addition, people have attempted to grow bulk GaN crystals on quasi-bulk GaN wafers by HVPE. (2,3) Nevertheless, the reduction in dislocation density in GaN crystals grown on quasi-bulk GaN wafers by HVPE seems to have its limitation; current HVPE-grown GaN substrates have a dislocation density on the order of high 10 5 to low 10 6 cm −2 . In addition, HVPE is inherently uneconomical because it utilizes an open-reactor system, which requires a constant flow of reactive gases and Ga precursor.…”

Section: Introductionmentioning

confidence: 99%

Ammonothermal Bulk GaN Growth and Its Processing

2014

Sensors and Materials

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In this paper, we overview the current progress of ammonothermal GaN growth at SixPoint Materials, Inc. and discuss issues in wafer processing. Bulk GaN crystals grown in small prototype reactors present a high-quality microstructure as well as an improved transparency. The dislocation density of the crystal is on the order of 4.0 × 10 4 cm −2 . The optical absorption coefficient as low as 4 cm −1 at 450 nm is obtained. Wafer processing techniques, such as wire sawing and chemical mechanical polishing, are one of the challenges in realizing GaN wafers. Crystal cracks are the major and fundamental obstacle in achieving a high-quality surface during wire sawing. The surface quality after chemical mechanical polishing (CMP) is successfully evaluated using X-ray diffraction.

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Section: Introductionmentioning

confidence: 99%

Ammonothermal Bulk GaN Growth and Its Processing

2014

Sensors and Materials

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“…Two-inch boule growth ranging from 2.5 and 3.5 mm up to 10 mm has been reported also by ATMI Inc, [51], Ferdinand-Braun-Institute [52], and Kyma Technologies, Inc. [ Fig. 2(b)] [53], [54], respectively. Different buffers and higher growth rates up to 300 m/h are likely to be used by the different groups.…”

Section: B Boule Growth Developmentmentioning

confidence: 60%

GaN Substrates for III-Nitride Devices

2010

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| Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several optoelectronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.

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“…methods such as HVPE (Hanser et al, 2008;Fujito et al, 2009), high-pressure solution growth (Porowski, 1999;Inoue et al, 2001), flux method (Yamane et al, 1998;Kawamura et al, 2003) and ammonothermal method (Dwiliński et al, 1998;Ketchum et al, 2001;Purdy et al, 2002) have been researched to grow bulk GaN. Among these methods, the ammonothermal growth of bulk GaN has a potential to provide cost competitive GaN wafers for lighting LEDs due to its excellent scalability.…”

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confidence: 99%