Fabrication and Characterization of New Ti-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi mathvariant="bold">T</mml:mi><mml:mi mathvariant="bold">i</mml:mi><mml:msub><mml:mrow><mml:mi mathvariant="bold">O</mml:mi></mml:mrow><mml:mrow><mml:mn mathvariant="bold">2</mml:mn></mml:mrow></mml:msub></mml:math>-Al and Ti-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi mathvariant="bold">T</mml:mi><mml:mi mathvariant="bold">i</mml:mi><mml:msub><mml:mrow><mml:mi mathvariant="bold">

Rawal, Yaksh; Ganguly, Swaroop; Baghini, Maryam Shojaei

doi:10.1155/2012/694105

Cited by 12 publications

(5 citation statements)

References 16 publications

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“…7(b) and Fig. 8(b).Knowing that the maximum value of sensitivity occurs when the dc bias gives the peak curvature of versus V [16]. These results allow us to prove that the sensitivity level of our samples does not exceed a significant level at very low.…”

Section: Resultssupporting

confidence: 66%

Study and Analysis of SBD Detector Sensitivity Based on Au-InP and Au-GaAs Structures

Reguieg¹,

Souar²,

Becharef³

2017

J. Nano- Electron. Phys.

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In this paper, a novel approach of materials combination is proposed to enhance the performance of Schottky Barrier Diodes (SBD) detector. High purity of gold (90 %) in combination with two different semiconductors (Indium Phosphide (InP) and Gallium Arsenide (GaAs)) are used to perform SBD samples. The current saturation and ideality factor were extracted from experimental current-voltage characterization, the results insure interesting values. Our sample's conductivity has been studied and confirm asymmetric in its shape. The analysis of maximum level of current sensitivity for both samples prove their peak value in the nonlinear range of SBD, thus Au-InP gives maximum sensitivity equal to 27.96 A/W and Au-GaAs has a maximum sensitivity equal to 49.33 A/W, which makes them successfully useful for detection in comparison to other works in this domain.

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Section: Resultssupporting

confidence: 66%

Study and Analysis of SBD Detector Sensitivity Based on Au-InP and Au-GaAs Structures

Reguieg¹,

Souar²,

Becharef³

2017

J. Nano- Electron. Phys.

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“…The asymmetry is more pronounced when the work function between the two metal electrodes is large. Various combination of dissimilar metals had been investigated in past such as Ni-NiO-Au [8], Ni-NiO-Ni [12], Ti-TiO 2 -Al [13], NiNio-Cr/Au [14], Al-AlO x -Pt [15] Although MIM devices have been studied in great detail for a range of applications, to date their fabrication and implementation in the design of RF circuits on flex substrates has not been investigated. In this paper, we present the design, fabrication and characterization of MIM based RF/Microwave devices on flex substrate, Polyetheretheretherketone (PEEK).…”

Section: Introductionmentioning

confidence: 99%

Study of microwave circuits based on Metal-Insulator-Metal (MIM) diodes on flex substrates

Kaur

Yang

Chahal

2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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Thispaper demonstrates fabrication and characterization of thin-film Ti-TiO 2 -Pd based MetalInsulator-Metal (MIM) diodes on flexible substrates. MIM diodes with contact areas of 9 µm 2 and 48 µm 2 were fabricated, and a comparison is made for their DC and RF performances. The current-voltage characteristics of the fabricated diodes show strong non-linearity. The diodes are also tested for microwave circuit applications such as detection, frequency multiplication and mixing over a frequency range of 1 -18 GHz. The devices show strong second harmonic frequency multiplication for fundamental frequencies of 1-10 GHz. Details of DC characteristics, RF rectification, mixing and multiplication using MIM diodes are presented. IntroductionThe microwave circuits on flex substrates enable various applications in wireless communication, identification systems, portable/wearable communication devices, wireless power transfer, security and bio-sensing. Flexible electronics have potential advantages over conventional system as they are light weight, large area compatible, enables roll to roll fabrication, low temperature processing and thus very important for low cost manufacturing [1][2][3][4]. Over the last decade, significant work has been carried out on the design and fabrication of RF passive devices on flexible substrates [5,6]. However, direct integration of active components such as diodes and transistors on flex substrates is still a challenge. For applications that require low cost but high-performance RF/Microwave circuitry capable of operating up to several gigahertzs, flexible substrate is a good choice. Many RF applications like portable communications systems require microwave wave antenna arrays integrated with active electronic devices. The cost of assembling passive and active device modules is high as the cost of the individual III-V electronic circuitry is very high. This problem can be solved by integration of passive devices like antenna arrays and highspeed electronics onto large-area, flexible substrates for applications like imaging system. The metal-insulator-metal (MIM) diodes are made entirely of thin film materials i.e. metals and insulators and provide non-linear characteristics dominated by tunneling effects. They can be easily fabricated on wide variety of flexible substrate or even on top of existing CMOS circuitry. Thus RF and microwave devices based on MIM diodes is a promising area of research, as they can operated at very high frequencies, they are simple to implement and process, and a host of metal dielectric combinations can be used to achieve desired diode characteristics. Thus, this allows fabrication of RF circuits onto low cost plastic substrates, which in-turn may be attached to objects of interest like automobile, aircraft or on

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“…The results indicate maximum responsivity S (V −1 ) equal to 6, zero-bias responsivity equal to 4, and zero-bias resistance equal to 505 Ω. The fabrication and characterization of Ti-TiO 2 -Al and Ti-TiO 2 -Pt tunnel diodes are given in [45]. In both cases, the thickness of the oxide is approximately 9 nm.…”

Section: Methodsmentioning

confidence: 99%

“…In the second electrode, 5 nm of chromium (Cr) followed by 65 nm thick gold (Au) were deposited. The fabrication and characterization of Ti-TiO2-Al and Ti-TiO2-Pt tunnel diodes are given in [45]. In both cases, the thickness of the oxide is approximately 9 nm.…”

Section: Methodsmentioning

confidence: 99%

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Progress in THz Rectifier Technology: Research and Perspectives

2022

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Schottky diode (SD) has seen great improvements in the past few decades and, for many THz applications, it is the most useful device. However, the use and recycling of forms of energy such as solar energy and the infrared thermal radiation that the Earth continuously emits represent one of the most relevant and critical issues for this diode, which is unable to rectify signals above 5 THz. The goal is to develop highly efficient diodes capable of converting radiation from IR spectra to visible ones in direct current (DC). A set of performance criteria is investigated to select some of the most prominent materials required for developing innovative types of electrodes, but also a wide variety of insulator layers is required for the rectification process, which can affect the performance of the device. The current rectifying devices are here reviewed according to the defined performance criteria. The main aim of this review is to provide a wide overview of recent research progress, specific issues, performance, and future directions in THz rectifier technology based on quantum mechanical tunneling and asymmetric structure.

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Fabrication and Characterization of New Ti-TiO2-Al and Ti-Ti

Cited by 12 publications

References 16 publications

Study and Analysis of SBD Detector Sensitivity Based on Au-InP and Au-GaAs Structures

Study and Analysis of SBD Detector Sensitivity Based on Au-InP and Au-GaAs Structures

Study of microwave circuits based on Metal-Insulator-Metal (MIM) diodes on flex substrates

Progress in THz Rectifier Technology: Research and Perspectives

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