Photoluminescent porous silicon (PSi) were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 620 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon nanocrystal in porous silicon. As-prepared PSi was sonicated, fractured, and centrifuged in toluene to obtain photoluminescence silicon quantum dots. BET and BHJ methods were employed to study the specific surface area of as-prepared PSi. Optical characterization of red photoluminescent silicon nanocrystal was investigated by UV-vis and fluorescence spectrometer. Also SEM and TEM images of porous silicon and nanoparticles were investigated.