Fabrication and characterization of p-Si/n-ZnO heterojunction ultraviolet photodetector

Abstract

This work deals with the fabrication and characterization of ultraviolet (UV) photodetectors (PDs) based on Si(p)/ZnO(n) heterojunction diodes. Zinc oxide films were grown by metal-organic chemical vapor deposition technique at a growth temperature of 450 0 C. The non-stoichiometric nature with oxygen vacancy implies the n-type conductivity of as-grown ZnO. The optical bandgap was found to be 3.37 eV which was direct in nature. The ideality factor of the diode was calculated as 3.57. At a reverse bias of 3V the detector showed an on/off ratio of 16. The rise and decay time of transient response were 242 ms and 354 ms, respectively.

Selective pore filling of mesoporous CMK-5 carbon studied by XRD: Comparison between theoretical simulations and experimental results

“…the intra-tubular pores (within each carbon tube) and the inter-tubular pores (between adjacent carbon tubes), as depicted in Figure 1. Since the first discovery of CMK-5 in 2001 an enormous number of novel (composite) materials with a huge potential for catalysis [1][2][3][4][5][6][7][8] , energy storage/conversion [9][10][11][12][13][14] and adsorption-/desorption studies [15][16][17][18][19][20][21] based on the initial CMK-5 structure have been synthesized.…”