Fabrication and Characterization of Pb(Zr,Ti)O 3 (PZT) Ultra-Thin Films Below 100nm

In recent years, research on lead zirconate titanate (PZT) has shown that its application in electronic devices is dependant on its composition as well as the Pb effect [1 -4]. The availability of thin film deposition methods also provide opportunities to study the suitability of the material for application in other field such as microwaves. This is because the deposition technique affects the microstructure and high frequency properties thin film PZT [5]. We have shown in [2] using sputtered PZT thin films can result in miniaturization of microwave capacitors. However, as observed by [3 -7], the performance of PZT thin films at high frequencies can be affected by the intrinsic properties of the thin films such as film composition.In this work, sputtered PZT thin films with differing PbO and PbO 2 contents were used to investigate the effect of lead compositions on microwave properties of PZT capacitors. Capacitors with five different electrode areas were fabricated, and on-wafer characterization process was performed between 100 MHz to 20 GHz. S 11 was measured and parasitic elements were de-embedded to evaluate the capacitance, relative permittivity and loss tangent as depicted in Figs. 1 and 2. Capacitive behavior was proved whereby the capacitance was proportional to the electrode area and the film permittivity. The dependence of permittivity on frequency was also studied. The results indicate that the permittivity, and hence the capacitor performance, were highly dependent on the PbO and PbO 2 content.

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On the effect of PbO and PbO<inf>2</inf> content on microwave behaviour of PZT-derived MMIC capacitors

Sulaiman

Bakar

Awang

2009

2009 International Semiconductor Device Research Symposium

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Fabrication and Characterization of Pb(Zr,Ti)O 3 (PZT) Ultra-Thin Films Below 100nm

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On the effect of PbO and PbO<inf>2</inf> content on microwave behaviour of PZT-derived MMIC capacitors

On the effect of PbO and PbO<inf>2</inf> content on microwave behaviour of PZT-derived MMIC capacitors

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