Fullerene-based photovoltaic devices with an inverted structure containing silicon 2,3naphthalocyanine bis(trihexylsilyloxide) (SiNc) were fabricated and characterized. SiNc worked as a donor material, and showed optical absorption at ~800 nm. C60 and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) were used as acceptor materials, and C60 or PCBM/SiNc system solar cells showed incident photon to current conversion efficiency in the range of 700~800 nm. The PCBM/SiNc solar cell provided high open circuit voltage of 0.74 V. From the energy level diagram, the higher lowest unoccupied molecular orbital level of PCBM contributed to the high open circuit voltage. The surface roughness at the C60/SiNc interface is larger compared to that at the PCBM/SiNc interface, which resulted in the high short circuit current density of the C60/SiNc solar cell.