Fabrication and characterization of pentacene-based transistors with a room-temperature mobility of 1.25cm2/Vs

Seo, Hoon Seok; Jang, Young Se; Zhang, Ying; Abthagir, P. Syed; Choi, Jong Ho

doi:10.1016/j.orgel.2008.01.008

Cited by 64 publications

(34 citation statements)

References 25 publications

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“…This suggests that the mobility is improved by surface roughness elimination. The effective mobility in polycrystalline materials depends on phonon scattering, impurity scattering, interface roughness scattering, defect scattering, and grain boundary scattering mechanisms [30,31]. The roughness of the studied transistor is lower than that of pentacene phototransistors referred in literature [29,32] and thus, the higher mobility of the transistor depends on the surface roughness of the SiO 2 , as the mobility is improved by reduction in surface scattering mechanisms taken place in the presence of a smoother interface.…”

Section: Resultsmentioning

confidence: 90%

High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol–gel method

Okur

Yakuphanoğlu

Σταθάτος³

2010

Microelectronic Engineering

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a b s t r a c tWe have fabricated a pentacene based phototransistor by employing a modified nanostructured SiO 2 gate dielectric. The photosensing properties of the pentacene thin film transistor fabricated on n-Si substrate with nanostructured SiO 2 as gate dielectric have been investigated. The photocurrent of the transistor increases with an increase in illumination intensity. This suggests that the pentacene thin film transistor behaves as a phototransistor with p-channel characteristics. The photosensitivity and responsivity values of the transistor are 630.4 and 0.10 A/W, respectively at the off state under AM 1.5 light illumination. The field effect mobility of the pentacene phototransistor was also found to be 2.96 cm 2 /Vs. The nanostructured surface of the gate possibly is the cause of the high-mobility value of the phototransistor due to light scattering from the increased surface area.Crown

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Section: Resultsmentioning

confidence: 90%

High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol–gel method

Okur

Yakuphanoğlu

Σταθάτος³

2010

Microelectronic Engineering

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“…Self Assembled Monolayers (SAM) are widely used to modify the SiO 2 dielectric surface. Due to dangling functional groups, the SAM can tune the dielectric surface energy [3], prevent adsorbtion of water molecules [19] and hence can reduce the charge traps density [20,21]. The first SAMsmodified gate dielectric was realized by Collet et al in order to reduce the leakage current [22].…”

Section: Introductionmentioning

confidence: 99%

“…Further studies on pentacene OFETs revealed an increased mobility with the SAM dielectric modification. Hexamethyldisilasane (HMDS) [2], octadecyltrimethoxysilane (OTMS) [23] and octyltrichlorosilane (OTS) [19] on SiO 2 allowed to reach mobilities of 3.4, 2.3 and 1.25 cm 2 /Vs respectively. Pentacene OFETs with alumina dielectric modified by alkyl group terminated phosphonic acid monolayers achieved mobilities of 2-3 cm 2 /Vs [24].…”

Section: Introductionmentioning

confidence: 99%

Organic field-effect transistor with octadecyltrichlorosilane (OTS) self-assembled monolayers on gate oxide: effect of OTS quality

Devynck

Tardy

Wantz

et al. 2011

Eur. Phys. J. Appl. Phys.

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To cite this version:M. Devynck, P. Tardy, G. Wantz, Y. Nicolas, L. Hirsch. Organic field-effect transistor with octadecyltrichlorosilane (OTS) self-assembled monolayers on gate oxide: effect of OTS quality. European Physical Journal: Applied Physics, EDP Sciences, 2011, 56 (3) AbstractThe effect of OTS (octadecyltrichlorosilane) Self Assembled Monolayer (SAM) grafted on SiO 2 gate dielectric of pentacene based OFETs (organic field effect transistors) is investigated. A significant improvement of the charge mobility (µ), up to 0.74cm 2 /Vs, is reached thanks to OTS treatment. However, in spite of improved performances, several drawbacks, such as an increase in mobility dispersion, substantial hysteresis in I DS -V G characteristics and high threshold voltages (V T ) are observed. Changing solvent and deposition method turns out to have no significant effect on the mobility dispersion. A more accurate approach on the evolution of the mobility and the threshold voltage dispersion with OTS storage time highlights the effect of the OTS solution ageing. Even if no difference is evidenced in the surface energy and roughness of the OTS layer, electrical characteristics exhibit considerable deterioration with OTS solution storage time. Using an "aged" OTS solution, opened under air, kept under argon and distilled before use results in an increase of the I DS -V G hysteresis as well as in V T and in mobility dispersion. In comparison, fresh-OTS-based OFETs present a very low hysteresis, a threshold voltage close to 0 and a much lower mobility dispersion. It is demonstrated that aged OTS solutions contain impurities that are not removed by distillation process which lead to less densely packed layer causing interfacial charge traps thus deteriorated performances.

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“…Among various functional organic optoelectronic materials, pentacene is regarded as one of the most promising smallweight molecular organic materials owing to its outstanding carrier mobility [1][2][3][4][5][6]. Heterojunction organic photovoltaic (OPV) solar cell based on pentacene donor and C60 acceptor was reported to have an energy conversion efficiency as high as 2.7% in 2004 [7].…”

Section: Introductionmentioning

confidence: 99%

Transient photovoltage and photoluminescence study of exciton dissociation at indium tin oxide/pentacene interface

Zheng

Sun

et al. 2011

Sci. China Phys. Mech. Astron.

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The exciton dissociation at ITO/pentacene interface is studied by means of transient photovoltage measurement. Opposite to ITO/NPB, ITO/CuPc or ITO/C60 interface where polarity change of transient photovoltage is observed, no interfacial dissociation is found at room temperature, which indicates a lack of Frenkel excitons in pentacene. Temperature-dependent photoluminescence (PL) is investigated. More like the behavior of inorganic semiconductors, the integrated PL intensity exhibits monotonic decrease with increasing temperature. A nonradiative path with characteristic activation energy of 8 meV is found to dominate at room temperature. The PL measurement also indicates that like in inorganic semiconductors, other types of excitation, for example, free carriers, could be responsible for the photoelectric processes. pentacene, interfacial dissociation, transient photovoltage, frenkel exciton, charge-transfer exciton, photoluminescence

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Fabrication and characterization of pentacene-based transistors with a room-temperature mobility of 1.25cm2/Vs

Cited by 64 publications

References 25 publications

High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol–gel method

High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol–gel method

Organic field-effect transistor with octadecyltrichlorosilane (OTS) self-assembled monolayers on gate oxide: effect of OTS quality

Transient photovoltage and photoluminescence study of exciton dissociation at indium tin oxide/pentacene interface

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