Fabrication and Characterization of Photodetector Based on Porous Silicon

Ismail, Raid A.

doi:10.1380/ejssnt.2010.388

Cited by 50 publications

(14 citation statements)

References 11 publications

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“…Sz( ten point height) was 119.7 nm and roughness average was 17.2 nm.from previous data and our results (irregular and randomly distributed), we can understand why structure of porous heterojunction is always nonuniformly distributed and the difference over large area may be considerable . agreement with those reported earlier [12]. The current reaches a saturation value at higher bias voltage > −2 , the electric field is strong enough to separate any generated pair for certain incident power.…”

Section: Measurementsupporting

confidence: 92%

Fabrication, Morphological and Optoelectronic Properties of Antimony on Porous Silicon as MSM Photodetector

Hadi¹

2015

J. Fundam and Appl Sci.

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We report on the fabrication and characterization of MSM photodetector. We investigated the surface morphological and the structural properties of the porous silicon by optical microscopy, atomic force microscope (AFM) and X-ray diffraction. The metal-semiconductor-metal photodetector were fabricated by using Sb as Schottky contact metal.The junction exhibits good rectification ratio of 105 at bias of 2V. A large photocurrent to dark-current contrast ratio higher than 55 orders of magnitude and low dark currents below 0.89 nA .High responsivity of 0.225A/W at 400 nm and 0.15 A/W at 400 and 700nm were observed at an operating bias of less than -2 V, corresponding quantum efficiency of 70% and 26% respectively. The lifetimes are evaluated using OCVD method and the carrier life time is 100 μs. The results show that Sb on porous silicon (PS) structures will act as good candidates for making highly efficient photodiodes.

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Section: Measurementsupporting

confidence: 92%

Fabrication, Morphological and Optoelectronic Properties of Antimony on Porous Silicon as MSM Photodetector

Hadi¹

2015

J. Fundam and Appl Sci.

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“…The peaks are observed and located at (650, 700, 750 and 800) nm with sensitivities of (0.24, 0.38, 0.61 and 0.69) A/W for samples prepared at 15min and etching current (7, 9, 11, and 13) mA respectively. The high responsivity of photodetector is increasing from fact that the porous surface is in caparison photons also because the low concentration of surface recombination which make the surfaces very passivity in addition to the high reflectivity of PSi for light in the visible and near infrared regions is extremely low which agree with [19].…”

Section: Resultssupporting

confidence: 55%

Study of the Electrical Properties of Porous Silicon Prepared by Electrochemical Etching Technique

Alaarage¹,

Oneiza²,

Alzubaidi³

2019

Journal of Southwest Jiaotong University

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In our work, a P-type porous silicon (PSi) with orientation (100) have been prepared using the chemical etching method; the goal is to study the electrical properties of PSi samples prepared with completely different etching current (7, 9, 11 and 13) mA and glued for (15 min) anodization time. Depending on the atomic force microscopy (AFM) investigation, we notice the roughness of Si surface increases with increasing etching current because of increases within the dimension (diameter) of surface pits. The electrical and optoelectronic properties of prepared PSi, specifically capacitance-voltage (C-V), current-voltage (I-V), responsivity and detectivity, are analyzed. It had been found that electrical characteristics of porous Si samples measured in dark (Id) and below illumination (IPh) will be fitted well by the equations of thermal emission. From this point of view, Schottky barrier height (ɸB) and ideality factor (n) of made-up photodetectors were calculated. We tended to determine from I-V characteristics of a dark, and illuminations that the pass current through the PSi layer reduced by increasing the etching current, as a result of increasing the electrical resistance of PSi layer and therefore the optimum value of ideality factor is (2.7), whereas from C-V characteristic we determined that in-built potential accumulated with increasing etching current. The results show that there are clear results for better performance of photodetectors.

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“…Spectral distribution measurements of photoconductive signal revealed a shift of the maximum sensitivity towards visible region shorter wavelengths. It is observed that the presence of a PS layer on p-Si wafer causes a shift in this maximum peak to a higher energy and higher responsivity of the photodetector is the sum two terms the sensitivity of the FTO/PS Schottky contact and is the sensitivity of the PS/p-Si heterojunction as well as the reflectivity of porous Si for visible and near infrared regions is very low and that agree with [13]. Also, Alwan et al reported that the porosity of the porous silicon layer leads to hence improve the sensitivity of the formed junction between the crystalline silicon and the PS layer [14].…”

Section: Electrical Propertiessupporting

confidence: 68%

Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Hadi

2014

ILCPA

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In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV-Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO 2 : Ffilm was deduced. From (I-V) and (C-V) measurements, the barrier height ∅ for FTO/PS diode was of 0.77 eV, and the built in voltage V bi , which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.

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Fabrication and Characterization of Photodetector Based on Porous Silicon

Cited by 50 publications

References 11 publications

Fabrication, Morphological and Optoelectronic Properties of Antimony on Porous Silicon as MSM Photodetector

Fabrication, Morphological and Optoelectronic Properties of Antimony on Porous Silicon as MSM Photodetector

Study of the Electrical Properties of Porous Silicon Prepared by Electrochemical Etching Technique

Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

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