Fabrication and Characterization of Printed Phototransistors Based on Monochalcogenide Inks

Abstract

Two-dimensional (2D) layered semiconductors of Group-III monochalcogenides have gained increasing attention in photonics and electronics. The fabrication of large-scale, inexpensive inks which can be used in printed electronics applications is facilitated by the solution processing of 2D materials. In this study, gallium sulfide (GaS)-, gallium selenide (GaSe)-, and gallium telluride (GaTe)-loaded inks were synthesized and implemented to fabricate phototransistors on SiO 2 \Si substrates. To explore the printed device performances, several color illuminations were applied to the printed phototransistor, and the mobility, photoresponsivity, and external quantum efficiency parameters were compared. Under red-light illumination, the mobility of a GaTe nanoparticle-based phototransistor reached 7.456 cm 2 V −1 s −1 . The responsivity of the GaTe-based phototransistor was found to be the highest, with the value of 9.52 A W −1 under green light illumination. However, GaSe-based phototransistors gave the highest EQE value of 2482 (%) under blue light illumination with the mobility of 7.04 cm 2 V −1 s −1 . This study demonstrates that printable Group-III monochalcogenide inks can be synthesized with desired properties for use in printed electronic applications.

Degrading effect on electrical properties of printed gallium sulfide based photodetector

“…Raman spectroscopy has been performed for the identification of the GaS material after the fabrication of the GaS based photodetector on PET substrate. 532 nm laser is exposed on the material 1g , E 1 1g , and A 2 1g of GaS structure at room temperature are measured as 189.12, 295.39, and 360.96 cm −1 , respectively, which are in compliance with the literature results [1,20]. Followingly, 3 weeks after the fabrication of GaS based photodetector, the Raman spectrum measurement has been repeated and the measurement result is presented in figure 4(b).…”

“…The obtained graphical data is presented in figure 5(a) for the blue laser source and figure 5(b) for the red laser source. Here, the shifts from the origin in I-V curves are attributed to the large gap between the interdigit (100 µm) [20]. Along with, the mixture of the polymer with the metal monochalcogenide semiconductor material can cause the shift in the I-V curves as it can be seen in our previous study [23].…”

“…The LD output intensity is controlled by a laser driver by varying the supply current. The laser wavelengths have been selected according to our previous study [20]. After the current is supplied to the LD, the output power of the laser beam is measured by the source meter and laser beam is shined on the fabricated device.…”