Fabrication and characterization of quantum dot devices based on tetralayer graphene/hexagonal boron nitride heterostructures

Abstract

We report on low temperature carrier transport property of quantum dot (QD) devices based on hexagonal boron nitride-encapsulated tetralayer graphene heterostructures. In the device with single dot geometry, we demonstrate a stochastic Coulomb blockade, suggesting formation of multiple dots coupled each other in series/parallel. Under a perpendicular magnetic field, the overlapping Coulomb diamonds are lifted at zero bias voltage and the charging energy is decreased. These imply the suppression of multiple dots behavior. Our results pave a way toward the investigation of interlayer correlation on single electron transport in few-layer graphene QDs.

Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlattices

“…Fine hybrid quantum device structures, e.g., quantum point contact and singleelectron transistor on the 'monolithic' Gr/hBN superlattices, are left for a future study. [27][28][29][30][31][32] Search for signatures of 'hidden' orders and genuine quantum-limited physics should also be pursued beyond strongly correlated/'Mott' physics.…”