Fabrication and characterization of silicon nanowires with MACE method to influence the optical properties

Kashyap, Vikas; Chaudhary, Neeru; Goyal, Navdeep; Saxena, K. M. S.

doi:10.1016/j.matpr.2021.02.814

Cited by 8 publications

(5 citation statements)

References 32 publications

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“…Scanning electron microscopy (SEM) images in figure (1A-B) show the deposited PS-NS on the silicon substrate before and after switching its hydrophobicity. It is clear that the hydrophobicity nature of the silicon wafer resisted the resting of the PS-NS on its surface, where only the spot at which the solution was dropped on, has traces of the PS-NS as shown in figure (1). Specially with high spin coat parameter as 1000 rmp the PS-NS dispersion just flew out of surface.…”

Section: Resultsmentioning

confidence: 99%

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Fabrication of silicon nanowires (SiNWs) with nanosphere lithography: a comparison approach with laser ablation

Ahmed

Khalifa

Kreta

et al. 2023

Silicon Photonics XVIII

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The fabrication of Silicon nanostructures is still a point of interest to sustain a cheaper, faster, and more effective method. This work represents a comparison approach for the fabrication of SiNWs via modified Nanosphere lithography using polystyrene nanospheres (PS-NS) as templates against the Laser Ablation method. First, the Si type-p (111) wafer was treated with Oxygen/Argon Plasma to switch the wafer to the hydrophilic state to acquire an adequate nondispersive layer of PS-NS. The PS-NS was then dispersed in ethanol with a ratio [1:1]. The monolayer deposition on the wafer was achieved via 3-steps spinning with different rpm. The sizes of the PS-NS were then controlled by dry etching, using deep reactive ion etching (DRIE) for different periods to guide the size of the SiNWs. A silver (Ag) layer was then deposited on the structure to guide the silicon etching process via metal-assisted chemical etching (MACE) to control the length of the fabricated SiNWs. Another approach was to implement metal-assisted plasma etching (MAPE) first a layer of gold (Au) was sputtered on the sample using DC-Sputtering. The surface morphology of the structure has been investigated via field effect scanning electron microscopy (FE-SEM) and atomic force microscopy, while the optical characteristics were investigated via Fourier-transform infrared spectroscopy (FTIR) and photoluminescence (PL)

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Section: Resultsmentioning

confidence: 99%

“…Silicon Nanowire (SiNWs) have been known for their phenomenal adaptable opto-electrical and thermo-mechanical, characteristics 1,2 . That lead them to own their brand of technology "Silicon-based Technology" from which all of our today's technology have emerged.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of silicon nanowires (SiNWs) with nanosphere lithography: a comparison approach with laser ablation

Ahmed

Khalifa

Kreta

et al. 2023

Silicon Photonics XVIII

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“…Because the n-type wafers have a higher oxidation rate than the p-type wafers, the etching reaction rate is more rapid, and the length of the b-Si NWs is longer for n-type than for p-type b-Si NWs with the same etching duration [11]. Apart from wafer type, the doping level of the wafer has been found to influence the morphology of the etched structures [7,12]. A significant reduction in broadband reflection of b-Si is evident both for the p-type and n-type samples when contrasted to the reference c-Si.…”

Section: Resultsmentioning

confidence: 99%

“…A significant reduction in broadband reflection of b-Si is evident both for the p-type and n-type samples when contrasted to the reference c-Si. The b-Si NWs exhibit a lower broadband reflection for the whole range of 300-1100 nm wavelength and is ascribed to the refractive index grading effect, rendering the b-Sisurface as a multi-layer anti-reflection surface[12]. The calculated WAR for both substrates (p-type and n-type) decreased to 11.3% and 10.8%, respectively, after 5 min of etching.…”

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confidence: 97%

Impacts of Wafer Doping Type on Structural and Optical Properties of Black Silicon Fabricated by Metal-Assisted Chemical Etching

Sheriff

Abdulkadir

Hashim

et al. 2023

KEM

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In this work, the impacts of wafer doping type on structural and optical properties of black silicon (b-Si) fabricated by metal-assisted chemical etching (MACE) process are investigated. P-type and n-type mono-crystalline silicon (mono c-Si) wafers are etched in an aqueous solution of hydrofluoric acid (HF), silver nitrate (AgNO3) and deionised water (DI H2O) at room temperature and various durations from 5-20 minutes. Surface morphological results demonstrate the formation of b-Si nanowires (NWs) with average lengths of 0.4-0.8 μm for p-type wafers and 0.8-3.0 μm for n-type wafers. The higher length of the NWs for the n-type wafers is due to the minority charge carriers, which lead to a higher etching rate during the MACE process. Within the 300-1100 nm wavelength region, weighted average reflection (WAR) for the p-type and n-type wafers decreases to 6.6% and 6.4%, respectively, after 20 minutes of etching. The corresponding improvement in broadband light absorption results in maximum potential short-circuit current density (Jsc (max)) of 38.2 and 38.8 mA/cm2 for the p-type and n-type b-Si, respectively, which is an of enhancement of 39.9% and 42.1% when compared to the Jsc (max) of planar c-Si reference.

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“…Of particular interest are the silicon nanowires (SiNWs), which provide unique advantages in terms of strong light absorption and efficient charge separation and collection owing to their large surface area, thus facilitating its implementation in various optical energy harvesting devices in optoelectronic, photonic and photovoltaic applications [ 1 , 2 , 3 , 5 ]. A variety of physical and chemical methods are currently available to synthesize SiNWs [ 1 , 2 , 3 , 14 ]. Among others, metal-assisted chemical etching (MACE) allows several advantages as it is inexpensive, simple, controllable, and can handle large-quantitative production.…”

Section: Introductionmentioning

confidence: 99%

Efficient Diode Performance with Improved Effective Carrier Lifetime and Absorption Using Bismuth Nanoparticles Passivated Silicon Nanowires

et al. 2022

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In this paper, we report a novel design of bismuth nanoparticle-passivated silicon nanowire (Bi@SiNW) heterojunction composites for high diode performances and improved effective carrier lifetime and absorption properties. High-density vertically aligned SiNWs were fabricated using a simple and cost-effective silver-assisted chemical etching method. Bi nanoparticles (BiNPs) were then anchored in these nanowires by a straightforward thermal evaporation technique. The systematic study of the morphology, elemental composition, structure, and crystallinity provided evidence for the synergistic effect between SiNWs and BiNPs. Bi@SiNWs exhibited an eight-fold enhancement of the first-order Raman scattering compared to bare silicon. Current–voltage characteristics highlighted that bismuth treatment dramatically improved the rectifying behavior and diode parameters for Bi-passivated devices over Bi-free devices. Significantly, Bi wire-filling effectively increased the minority carrier lifetime and consequently reduced the surface recombination velocity, further indicating the benign role of Bi as a surface passivation coating. Furthermore, the near-perfect absorption property of up to 97% was achieved. The findings showed that a judicious amount of Bi coating is required. In this study the reasons behind the superior improvement in Bi@SiNW’s overall properties were elucidated thoroughly. Thus, Bi@SiNW heterojunction nanocomposites could be introduced as a promising and versatile candidate for nanoelectronics, photovoltaics and optoelectronics.

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Fabrication and characterization of silicon nanowires with MACE method to influence the optical properties

Cited by 8 publications

References 32 publications

Fabrication of silicon nanowires (SiNWs) with nanosphere lithography: a comparison approach with laser ablation

Fabrication of silicon nanowires (SiNWs) with nanosphere lithography: a comparison approach with laser ablation

Impacts of Wafer Doping Type on Structural and Optical Properties of Black Silicon Fabricated by Metal-Assisted Chemical Etching

Efficient Diode Performance with Improved Effective Carrier Lifetime and Absorption Using Bismuth Nanoparticles Passivated Silicon Nanowires

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