Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

Chaudhari, P. K.; Singh, Arvind; Topkar, A.; Dusane, Rajiv O.

doi:10.1016/j.nima.2015.01.043

Cited by 25 publications

(9 citation statements)

References 23 publications

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“…Finally, we compare our present simulation efficiency results with the existing research work which is discussed next. Boron Carbide ( 10 B 4 C) converter material based thermal neutron detectors have also been studied by Chaudhari et al [19] for planar detector configuration layout design. In their work they reported efficiency less than 1% at the thickness of 0.2 μm-0.5 μm of planar detector configuration layout.…”

Section: Comparisons and Discussionmentioning

confidence: 99%

“…Hence, there is a need to look for alternative variants of 10 B converter material or its compound. One such 10 B based compound is Boron Carbide ( 10 B 4 C) which uses ortho-carborane for coating which is non toxic in nature [17,18] and it has also been utilized as a converter material by various research groups around the globe [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of thermal neutron detection efficiency of Boron Carbide converter material using GEANT4 simulation for different types of detector configurations

et al. 2022

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A lot of advancement in the field of semiconductors has made it possible to design a solid state neutron detector. They are small in size and compact, have economical bulk fabrications, require low power for their operation. Hence it can act as a plausible alternative to traditional neutron detector such as gas filled and scintillation detectors. It has been observed that many factors like the choice of converter material, LLD settings and geometrical configurations have an impact on the thermal neutron detection efficiency of solid state neutron detector design. Therefore in the present research work, a systematic GEANT4 simulation have been performed on estimating the simulated thermal neutron detection efficiency (η) for five different solid state detector geometrical configurations design with Boron Carbide (10B4C) as a converter material. These detectors geometry configurations designs are planar, rectangular parallel trenches, cylindrical perforation, stack and spherical (single and multi-layer). The objective of the simulations was to obtain critical geometrical features for which the efficiency reaches the maximum value, of the given detector configurations. The influence of the different enrichment levels of 10B (20% to 80%) in Boron Carbide and different Low-Level Discriminator (LLD) value setting (from 100 keV to 700 keV) on the simulated thermal neutron detection efficiency was also investigated. Finally, the simulated multi channel analyzer spectra or in other words histoplots were obtained for all the detector configurations.

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Section: Comparisons and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of thermal neutron detection efficiency of Boron Carbide converter material using GEANT4 simulation for different types of detector configurations

et al. 2022

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“…As a boron-rich solid, it has a high cross-section for thermal neutron capture and is therefore of interest for nuclear applications ranging from reactor coatings [10,11] to neutron detection [12]. Its semi-insulating properties make it particularly appealing for solid-state direct-conversion neutron detectors [13][14][15][16],…”

Section: Introductionmentioning

confidence: 99%

Tuning the properties of a complex disordered material: Full factorial investigation of PECVD-grown amorphous hydrogenated boron carbide

Nordell

Keck

Nguyen

et al. 2016

Materials Chemistry and Physics

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A multiresponse 2 5 full factorial experiment is performed to investigate the effects of growth conditions (temperature, power, pressure, total flow rate, partial precursor flow rate) on the chemical, mechanical, dielectric, electronic, and charge transport properties of thin-film amorphous hydrogenated boron carbide (a-B x C:H y ) grown by plasma-enhanced chemical vapor deposition (PECVD) from orthocarborane. The main and interaction effects are determined and discussed, and the relationships between properties are investigated via correlation analysis. The process condition with the strongest influence on growth rate is pressure, followed by partial precursor flow rate, with low pressure and high partial flow rate conditions yielding the highest growth rates. The atomic concentration of hydrogen (at.% H) and density are controlled primarily by temperature and power, with low temperature and power conditions leading to relatively soft, hydrogen-rich, low-density, porous films, and vice versa. The B/C ratio is controlled by temperature, power, pressure, and the power*pressure interaction, and is uncorrelated to hydrogen concentration. Thin-film dielectric and electronic structure properties, including high-frequency dielectric constant (ε 1 ), low-frequency/total dielectric constant (κ), optical band gap (E Tauc /E 04 ), and Urbach energy (E U ), are correlated strongly with at.% H, and weakly to moderately with B/C ratio. These properties are dominated by the influence of temperature, with a second significant influence from the power*pressure interaction. The interaction of power and pressure leads to two opposite growth regimes-high power and high pressure or low power and low pressure-that can produce a-B x C:H y films with similar dielectric or electronic structure properties. Charge transport properties also show a correlation with at.% H and B/C, but not with the electronic structure and disorder parameters, which suggests a complicated relationship between the two. The range of properties measured highlights the potential of thin-film a-B x C:H y for low-κ dielectric and neutron detection applications, and suggests clear pathways for future material property optimization.

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“…Focusing on physical methods [ 16 ], they possess significant benefits compared to their chemical counterparts. Not only do they require low temperatures, thus facilitating minimum power consumption, but they also avoid the use of expensive and chemically hazardous toxic and/or explosive gases [ 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Sub-ps Pulsed Laser Deposition of Boron Films for Neutron Detector Applications

et al. 2023

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In view of the demand for high-quality thermal neutron detectors, boron films have recently attracted widespread research interest because of their special properties. In this work, we report on the deposition of boron films on silicon substrates by sub-picosecond pulsed laser deposition (PLD) at room temperature. Particular emphasis was placed on the investigation of the effect of the laser energy density (fluence) on the ablation process of the target material, as well as on the morphological properties of the resulting films. In addition, based on the study of the ablation and deposition rates as a function of the fluence, the ablation/deposition mechanisms are discussed. We show that well-adherent and stable boron films, with good quality surfaces revealing a good surface flatness and absence of cracks, can be obtained by means of the PLD technique, which proves to be a reliable and reproducible method for the fabrication of thick boron coatings that are suitable for neutron detection technology.

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Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

Cited by 25 publications

References 23 publications

Investigation of thermal neutron detection efficiency of Boron Carbide converter material using GEANT4 simulation for different types of detector configurations

Investigation of thermal neutron detection efficiency of Boron Carbide converter material using GEANT4 simulation for different types of detector configurations

Tuning the properties of a complex disordered material: Full factorial investigation of PECVD-grown amorphous hydrogenated boron carbide

Sub-ps Pulsed Laser Deposition of Boron Films for Neutron Detector Applications

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