Fabrication and characterization of strained InGaAs quantum wires grown on high index V-grooved GaAs substrates by LP-MOVPE

The effects of the quantum mechanical coupling on the optical properties of vertically stacked InGaAs/GaAs V-shaped quantum wires have been studied by means of photoluminescence and photoluminescence-excitation spectroscopy. The experimental results have been analyzed by a simple theoretical model based on an analytical procedure. We found that by decreasing the barrier thickness (Lb) between the wires, the vertical coupling induces a splitting of the single wire levels into symmetric and antisymmetric states characterized by a polarization anisotropy. Furthermore, a clear shift of the coupled levels and a narrowing of the spectral linewidth are observed with a decrease in Lb. These findings are consistent with the theoretical predictions.

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Effects of quantum mechanical coupling on the optical properties of vertically stacked V-groove quantum wires

Giorgi

Rinaldi

Passaseo

et al. 2000

Journal of Applied Physics

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Fabrication and characterization of strained InGaAs quantum wires grown on high index V-grooved GaAs substrates by LP-MOVPE

Cited by 1 publication

References 4 publications

Effects of quantum mechanical coupling on the optical properties of vertically stacked V-groove quantum wires

Effects of quantum mechanical coupling on the optical properties of vertically stacked V-groove quantum wires

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