Fabrication and Characterization of Thin Silicon PIN Detectors

Abstract

A new process flow of fabricating large area thin silicon PIN radiation detectors is presented in this paper. TMAH etching is applied to reduce the thickness of silicon wafers. The thickness of the fabricated detector is 100μm. The diameter of the circular active area is from 0.97mm to 12mm. At reverse bias voltage of 100V, the leakage current of detector with the diameter of 12mm is 5nA. The breakdown voltage of the detectors is over 100V. Analysis indicates that leakage current is mainly induced by surface leakage.