Fabrication and Characterization of TiO&lt;sub&gt;2&lt;/sub&gt; Nanorod Array Based Visible-Blind Ultraviolet Photodetector by Hydrothermal Process

Teoh, Lay-Gaik; Lee, Jiann‐Shing; Tseng, Yaw‐Teng; Lee, Wen-Jen

doi:10.2320/matertrans.m2015366

Cited by 8 publications

(2 citation statements)

References 23 publications

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“…Visible-blind UV photodetectors have attracted considerable attentions owing to their wide-range applications in missile plume detection, fire monitoring, space communication, biomedicine, and so on. − For active materials, wide band gap semiconductors such as ZnO, GaN, Ga 2 O 3 , and MgZnO x have been intensively investigated because of their high absorption coefficient in the UV region with marginal sensing to the visible light. For device structures, two-terminal type such as Schottky barrier, p–n junction, and metal–semiconductor–metal (MSM) was commonly employed in the traditional visible-blind UV photodetectors, exhibiting attractive performance such as high UV–visible rejection ratio, ultrafast response, and self-powered characteristics. − , Recently, three-terminal thin-film phototransistors based on oxide semiconductors have gained widespread interest on account of their low-temperature fabrication, the ease of on-panel processibility, and pixel array integration as compared to the traditional two-terminal devices. − More importantly, because of the gate bias control functionality and flexibility that is not available in the two-terminal devices, the phototransistors can yield self-amplification photocurrent.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

Javaid

Liang

et al. 2018

ACS Appl. Mater. Interfaces

120

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A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO /IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 10, and a specific detectivity up to 3.3 × 10 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays.

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Section: Introductionmentioning

confidence: 99%

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

Javaid

Liang

et al. 2018

ACS Appl. Mater. Interfaces

120

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“…The TiO 2 thin films/nanostructure-based photodetectors reported so far are either of very high responsivity at the cost of a very long response time (∼10 s of seconds) or have a very low responsivity value with comparatively fast response time (∼ms). , The reason is that very high responsivity is achieved in such devices through trap-assisted photoconductive gain, which in turn makes the response time of the devices very long. To address the growing demands of fabrication of TiO 2 -based photodetectors with high detectivity/responsivity along with fast response time, some attempts have been made by doping TiO 2 with various metal ions, e.g., N, In, Y, Er, Cu, etc., − and by depositing epitaxial TiO 2 on LaO and GaN crystals through magnetron sputtering, CVD, etc. , However, these are very expensive techniques.…”

Section: Introductionmentioning

confidence: 99%

PMMA as an Additive for Nanostructured TiO₂ Thin Films for Heterojunction Visible-Blind Photodetectors

Pal,

Jana,

Kamparath

et al. 2024

ACS Appl. Nano Mater.

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This study reports on high-quality, crystalline, nanostructured TiO 2 thin films with large-area coverage prepared by the sol−gel process using PMMA (poly(methyl methacrylate)) as an additive for applications in visible-blind photodetection. The Si/TiO 2 p−n junction photodiodes, fabricated through an inexpensive yet simple process with the addition of PMMA, exhibit superior characteristics, making them excellent candidates for visible-blind photodetectors operational in the UV and NIR ranges. The addition of PMMA to the solution significantly enhances the crystalline and optical properties, as well as the nanostructure morphology of the TiO 2 films. It is demonstrated that the nanostructure morphology, refractive index, and bandgap of TiO 2 can be precisely tailored by controlling the TiO 2 sol/PMMA volume ratio. A valence band offset as large as 2.8 ± 0.20 eV is measured for the TiO 2 /Si heterointerface, ensuring hole blockage through the film and electron-selective transport. Application of the TiO 2 nanostructured thin films in the p-Si/n-TiO 2 junction photodiodes reveals an excellent rectification ratio of ∼2 × 10 4 with a leakage current as low as ∼10 −10 A and a superior phototo-dark current ratio of ∼8000 under 325 nm illumination. Under reverse bias conditions, the photodiodes exhibit a reasonably high photoresponsivity (>1 A/W) with a high detectivity of ∼1 × 10 13 Jones. Moreover, a response time of ∼200 ms is achieved using these photodiodes.

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Application of Nanostructured TiO₂ in UV Photodetectors: A Review

et al. 2022

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moderate UV light is beneficial for human health, however, excessive UV radiation can cause various human diseases as well as strong destruction to the output of crops and the lifespan of buildings. [1b,3a,4] Therefore, an efficient detection of UV radiation is of significant importance in widespread applications, for example, chemical, environmental, and biological analysis or warning, astronomical investigation, and optical communication. [1c,5] For forewarning UV radiation with high-efficiency, a wide variety of UV PDs such as photomultiplier and silicon diode, have been extensively investigated and applied in the past decades. Nevertheless, there are intrinsic imperfections for the present commercial PDs, such as fragile, large volume, and excessive cost, which are obstacles when meeting the growing requirement of miniaturized and reliable UV detection devices for portable or shipped applications. In recent years, the development of semiconductor-based PDs that work according to the photoelectric effect has received great research interest. [1b,3a,6] In this scenario, a delicate selection of suitable materials with efficient morphological, microstructural, and photoelectrical characteristics plays a key role in the construction of PDs with high-performance. Generally, the PDs work following several different physical mechanisms, that is, surface plasma-wave-assisted effect, photoconductive effect, photothermoelectric effect, and photovoltaic effect, which have been systematically demonstrated in the previous report. [7] More recently, a new generation of wide-bandgap semiconductors including the classification of nitrides (GaN, AlN, BN, etc.), carbides (SiC, diamond, etc.), sulfides (ZnS, etc.), oxides (ZnO, Ga 2 O 3 , TiO 2 , etc.), halide perovskites (e.g., CH 3 NH 3 PbCl 3 ), [8] and their combinations, is emerged as the most attractive material candidates for constructing high-performance UV PDs, owing to their unique advantages, for instance low permittivity, high breakdown electric-fields, good thermal conductivity, high electron saturation rates, excellent radiation resistance, and their appropriate spectral range for UV response. [1d] In addition, the photoelectric conversion processes of the semiconductorbased PDs can be generally described by the behaviors of charge carriers, such as their generation, separation, transportation, and extraction. [9] Therefore, any factor that influences the photon-generated carrier behaviors should be the key parameter for further tuning their photodetecting performances. It As a wide-bandgap semiconductor material, titanium dioxide (TiO 2 ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and lowcost fabrication, the construction of high-performance photodetectors (PDs) based on TiO 2 nanostructures is ...

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Fabrication and Characterization of TiO<sub>2</sub> Nanorod Array Based Visible-Blind Ultraviolet Photodetector by Hydrothermal Process

Cited by 8 publications

References 23 publications

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

PMMA as an Additive for Nanostructured TiO₂ Thin Films for Heterojunction Visible-Blind Photodetectors

Application of Nanostructured TiO₂ in UV Photodetectors: A Review

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Fabrication and Characterization of TiO<sub>2</sub> Nanorod Array Based Visible-Blind Ultraviolet Photodetector by Hydrothermal Process

Cited by 8 publications

References 23 publications

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

PMMA as an Additive for Nanostructured TiO2 Thin Films for Heterojunction Visible-Blind Photodetectors

Application of Nanostructured TiO2 in UV Photodetectors: A Review

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PMMA as an Additive for Nanostructured TiO₂ Thin Films for Heterojunction Visible-Blind Photodetectors

Application of Nanostructured TiO₂ in UV Photodetectors: A Review