Fabrication and Characterization of Transparent Tin Dioxide Films with Variable Stoichiometric Composition

Ксеневич, В. К.; Adamchuk, Dzmitry; Оджаев, В. Б.

doi:10.12693/aphyspola.128.861

Cited by 4 publications

(3 citation statements)

References 16 publications

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“…It should be noted that tin oxide can be easily transformed to tin dioxide using SnO oxidation or disproportionation reactions [15]. Therefore the phase transition SnO → SnO 2 with a possible formation of intermediate tin oxide phases usually occur during fabrication of tin dioxide of various architecture by means of different methods: electron beam evaporation [16], spray pyrolysis [16,17], sol-gel synthesis [12,18], physical vapour deposition [17] and magnetron sputtering [19] followed by thermal annealing etc.…”

Section: Introductionmentioning

confidence: 99%

Nonstoichiometric tin oxide films: study by X-ray diffraction, Raman scattering and electron paramagnetic resonance

Adamchuk¹,

Ксеневич²,

Poklonski³

et al. 2020

physics

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Nonstoichiometric SnO/SnO2/SnO2−δ films were fabricated by DC magnetron sputtering and reactive DC magnetron sputtering of tin target with further 2-stage temperature annealing of synthesized materials. X-ray diffraction analysis, Raman spectroscopy and electron paramagnetic resonance (EPR) spectroscopy were employed to study the influence of oxygen content in the plasma during the sputtering process and the temperature of annealing on the stoichiometric and phase composition of synthesized films. It was found that the tin monoxide phase prevailed in the films fabricated by DC magnetron sputtering in the argon plasma followed by a 2-stage annealing process. Nanocrystalline films containing both tin monoxide and tin dioxide were synthesized when reactive magnetron sputtering with a small content of oxygen (of about 1 vol.%) was used. The increase of oxygen content in the plasma to the value of about 2 vol.% leads to the formation of amorphous films. The intensity of the Raman peaks inherent in SnO2 vibration modes was found to depend on the content of the tin monoxide phase in the films. This effect can be attributed to the dissipative transition of electronic excitation from tin monoxide to tin dioxide nanocrystallites.

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Section: Introductionmentioning

confidence: 99%

Nonstoichiometric tin oxide films: study by X-ray diffraction, Raman scattering and electron paramagnetic resonance

Adamchuk¹,

Ксеневич²,

Poklonski³

et al. 2020

physics

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“…Возможность управления стехиометрическим составом диоксида олова представляется очень важной для его использования в качестве активного материала датчиков влажности и газов. Ранее нами была предложена методика получения пленок оксидов олова, позволяющая варьировать их фазовый и стехиометрический состав (в том числе концентрацию кислородных вакансий в диоксиде олова) посредством изменения технологических параметров синтеза [17][18][19].…”

unclassified

“…Напыление производилось в среде аргона с добавлением кислорода, содержание которого не превышало 1 об.%. Как нами было установлено ранее [17][18][19], данный метод позволяет получать нестехиометрические тонкие пленки с варьируемой в широком диапазоне величин электропроводностью (из-за различной концентрации кислородных вакансий), а также изменять их фазовый состав. В настоящей работе электропроводность пленок варьировалась посредством изменения температуры отжига на 2-й стадии в диапазоне 350-400 °C.…”

unclassified

Features of water vapor adsorption and desorption on the surface of non-stoichiometric tin dioxide films

Adamchuk

Ксеневич

Поклонский

et al. 2020

Vescì Akademìì navuk Belarusì. Seryâ fizika-matematyčnyh navuk

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Herein, the influence of water vapor adsorption and desorption processes on the surface of SnO2−δ nanocrystalline films with different concentrations of oxygen vacancies on their electrical conductivity at room temperature was studied. SnO2−δ films were synthesized by means of reactive magnetron sputtering of tin in an argon-oxygen plasma followed by 2-stage oxidative annealing. The concentration of oxygen vacancies in the films was varied by changing the 2nd stage annealing temperature within the range 350–400 °C. It was found that in the films with the highest concentration of oxygen vacancies (~1020 cm−3) in the region of low relative humidity (less than ~30 %), an increase in electrical conductivity was observed due to the dissociative adsorption of water molecules with the formation of hydroxyl groups. The adsorption of water vapor on the surface of SnO2−δ films at room temperature at relative humidity values higher than ~30 % was found to induce a decrease in the electrical conductivity of the samples. The generation of positive and negative EMF pulses between the open surface of SnO2−δ nanocrystalline films and the one covered by waterproof materials under the adsorption and desorption of water vapor, respectively, was detected. The change of resistance and the generated EMF value under the adsorption-desorption processes was found to increase with the concentration of free charge carriers in the films.

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Effect of annealing on the structural, optical and electrical properties of (F, Zn) double doped SnO2 nanoparticles obtained by the laser pyrolysis method

Dutu

Fleaca

Dumitrache

et al. 2022

Materials Science in Semiconductor Processing

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Fabrication and Characterization of Transparent Tin Dioxide Films with Variable Stoichiometric Composition

Cited by 4 publications

References 16 publications

Nonstoichiometric tin oxide films: study by X-ray diffraction, Raman scattering and electron paramagnetic resonance

Nonstoichiometric tin oxide films: study by X-ray diffraction, Raman scattering and electron paramagnetic resonance

Features of water vapor adsorption and desorption on the surface of non-stoichiometric tin dioxide films

Effect of annealing on the structural, optical and electrical properties of (F, Zn) double doped SnO2 nanoparticles obtained by the laser pyrolysis method

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