2016
DOI: 10.1007/s10854-016-5203-0
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Fabrication and characterization of ZnO nanocrystal/p-Si heterojunction diode

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Cited by 4 publications
(1 citation statement)
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“…This case is attributed to the nonideal behavior (current transportation) of poly(AAm-co-HEMA)-ZnO based Si heterojunction diodes, considering the inhomogeneous barrier distribution, series resistance, interface film layer, tunneling effect and interface states, recombination and minority carrier injection [22][23][24]. The ideality factor was found to be 2.36 for the diode based on ZnO thin films synthesized by thermal decomposition method and formed on p-Si [25]. The transport mechanism is considered based on electron-hole recombination at low values of n (n~2) [26].…”
Section: Resultsmentioning
confidence: 99%
“…This case is attributed to the nonideal behavior (current transportation) of poly(AAm-co-HEMA)-ZnO based Si heterojunction diodes, considering the inhomogeneous barrier distribution, series resistance, interface film layer, tunneling effect and interface states, recombination and minority carrier injection [22][23][24]. The ideality factor was found to be 2.36 for the diode based on ZnO thin films synthesized by thermal decomposition method and formed on p-Si [25]. The transport mechanism is considered based on electron-hole recombination at low values of n (n~2) [26].…”
Section: Resultsmentioning
confidence: 99%