Fabrication and Characterizations of Nanorod Light Emitting Diode Arrays Using Nanosphere Lithography

Abstract

In this paper, by sping-coating a mono layer of nanospheres (nanoparticles) on top of the sample, the technology of nanosphere lithography is developed and applied to GaN based LED epistructures. By etching the p-type GaN further through the active region, p-i-n nanorods are exposed all over the mesa area. By inserting a spacer layer in between rods, nanrod LED arrays can be realized without shorting the p-type contact to n-GaN. The electrical and optical properties of the InGaN/GaN-based nanodevices are investigated at room temperatures.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

“…Although micro or nanostructured (In)GaN exhibits excellent features, the performance of nanostructured GaN-based LEDs does not meet the expected requirements because the emitting units (nanorods) are discretely separated (planar quantum wells in the GaN rod LED with axial orientation) and their surfaces face each other (core/shell rod structure LED of a cylindrical quantum well). These geometrical features lead to reduced active areas and narrower radiation profiles in nanorod-based LEDs; therefore, light extraction in nano-LEDs is inefficient [14,15].…”