Fabrication and electrical characterization of p-ZnIn₂Se₄/n-Si heterojunction diode structure

Abstract

Semiconducting thin films of p-ZnIn 2 Se 4 were deposited on a crystalline n-silicon (Si) substrate by a flash evaporation technique. A heterojunction diode comprising of Au/p-ZnIn 2 Se 4 /n-Si/Al structure was fabricated. The heterojunction was subjected to current (I)-voltage (V) and capacitance (C)-voltage (V) characterization. The p-ZnIn 2 Se 4 /n-Si heterojunction showed behaviour typical of a p-n junction diode. The heterojunction diode ideality factor, rectification ratio, barrier height and carrier concentration were determined from the I-V and C-V measurements. At lower applied voltages, the electrical conduction was found to take place by thermionic emission whereas at higher voltages, a space charge-limited conduction mechanism was observed. A theoretical energy band diagram was constructed for the fabricated p-ZnIn 2 Se 4 /n-Si heterojunction on the basis of Anderson's model. The photovoltaic behaviour of the fabricated heterojunction was also investigated and the results were reported.

Optical Characterization of Semiconducting Thin Films Using UV-VIS-NIR Spectroscopy: A Review

“…However, careful sample preparation processes are necessary for the film to exhibit optical characteristics typical of the bulk material. The authors have inured the growth [7], [8] electrical [9], optical [10], and magnetotransport [11] chattels of several undoped and doped binary and ternary semiconducting compounds and their bids as Schottky diodes [12], heterojunctions [13,14], photovoltaics [15], [16] and memory switching gizmos [17][18][19][20].…”