2005
DOI: 10.1111/j.1551-2916.2004.00170.x
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Fabrication and Electrical Properties of Mn–Ni–Co–Cu–Si Oxides Negative Temperature Coefficient Thermistors

Abstract: The microstructure and electrical properties of Mn–Ni–Co–Cu–Si oxides negative temperature coefficient (NTC) thermistors were studied. The as‐sintered (Mn1.62Ni0.72Co0.57−x CuxSi0.09)O4 (0≤x≤0.12) and (Mn1.2Ni0.78Co0.87−xCu0.15Six)O4 (0≤x≤ 0.15) ceramics showed the solid solutions of Mn–Ni–Co–Cu–Si oxides with a cubic spinel structure. The addition of SiO2 led to an increase in the temperature coefficient of resistivity. This demonstrates that the SiO2 addition is desirable for developing highly sensitive NTC … Show more

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Cited by 97 publications
(30 citation statements)
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“…On the basis of the resistivity data of the Sr-Bi-Mn-Fe-O thick-film system, it is clear that the values of 25 and the B 25/85 constant can be adjusted with different compositions. Furthermore, the film conductivity can also be explained by the following charge transport process [13,14] The thermistor parameters of sample B2 sintered at different temperatures is shown in Table 2. The films sintered at temperatures 780-790 • C show low room-temperature resistivity, compared with those over or below the sintered temperature range.…”
Section: Resultsmentioning
confidence: 99%
“…On the basis of the resistivity data of the Sr-Bi-Mn-Fe-O thick-film system, it is clear that the values of 25 and the B 25/85 constant can be adjusted with different compositions. Furthermore, the film conductivity can also be explained by the following charge transport process [13,14] The thermistor parameters of sample B2 sintered at different temperatures is shown in Table 2. The films sintered at temperatures 780-790 • C show low room-temperature resistivity, compared with those over or below the sintered temperature range.…”
Section: Resultsmentioning
confidence: 99%
“…The incorporation of a tiny amount of La 2 O 3 exhibited a much increased resistivity without causing much change in the B value. 18 In all samples, the conduction is mainly caused by the hopping of electrons between Mn 3+ to Mn 4+ on octahedral sites and also the Cu ions participate in the transfer process in the form of instantaneous Cu + quasi-stable state at the octahedral site. Perovskite-structured LaMnO 3 is a good electronic conductor with the electrical resistivity of <3 ΩÁcm.…”
Section: Electrical Propertiesmentioning
confidence: 93%
“…Sinterlenme işlemi sonrasında numunelerin yığın yoğunluk değerleri Arşimed Metodu kullanılarak hesaplanmıştır (Bengisu 2001 ile hesaplanmıştır. Burada "kb " ile ifade edilen Boltzmann sabitidir ve 8.617 x 10 −5 eV değerindedir (Park, 2005).…”
Section: Materyal Ve Yöntem (Materials and Method)unclassified