2020
DOI: 10.1016/j.matlet.2019.127028
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Fabrication and electroluminescence of sheet-like ZnO/Si light-emitting diodes by radio frequency magnetron sputtering method

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Cited by 10 publications
(1 citation statement)
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“…n the past decade, organic and inorganic semiconductor materials have attracted attention of many researcher scholars because these semiconductor materials demonstrated excellent electrical and optical properties. These materials have been used in light-emitting diodes, sensors, transistors, lasers, displays, photodetectors, highpowered devices, solar cells, memory and so on [1][2][3][4][5][6][7][8]. Given their wide bandgap, inorganic oxide-based semiconductor materials, such as In2O3 (3.7 eV), Ga2O3 (4.9 eV), ZnO (3.37 eV), NiO (3.9 eV) and WO3 (2.8 eV) have been utilised for optoelectronic devices [9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…n the past decade, organic and inorganic semiconductor materials have attracted attention of many researcher scholars because these semiconductor materials demonstrated excellent electrical and optical properties. These materials have been used in light-emitting diodes, sensors, transistors, lasers, displays, photodetectors, highpowered devices, solar cells, memory and so on [1][2][3][4][5][6][7][8]. Given their wide bandgap, inorganic oxide-based semiconductor materials, such as In2O3 (3.7 eV), Ga2O3 (4.9 eV), ZnO (3.37 eV), NiO (3.9 eV) and WO3 (2.8 eV) have been utilised for optoelectronic devices [9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%