Heterostructures of two-dimensional (2D) layered materials, integrating two or more building blocks with complementing counterparts, can regulate the confinement and transportation of charge carriers via vacancy-induced defect and interfacial states. Herein, reduced graphene oxide-molybdenum disulfide (rGO-MoS2) nanohybrid were fabricated and reinforced with various polymers [PMMA, PVDF, and PMMA-PVDF (20:80) blend] to study the resistive memory properties in a metal-insulator-metal configuration. The SEM analysis presents a hierarchical 3D flower-like MoS2 intercalated with rGO nanosheets. TEM image exhibits MoS2 nanoflakes well interspersed and grafted on layered rGO sheets, forming sandwich heterostructures. Raman analysis shows a higher ID/IG ratio for rGO-MoS2 than rGO, demonstrating numerous defect states in rGO. The XRD analysis of the polymer blend containing rGO-MoS2 exhibits β-crystal phases with a polarity-dependent internal electric field (E-field). The J-V characteristics of pure MoS2-polymer films display a write-once-read-many (WORM) behavior with a current ION/IOFF ratio of ~102-103, in contrast to pristine polymer films exhibiting repeatable electrical hysteresis. Instead, the rGO-MoS2 -based devices display bipolar characteristics (ION/IOFF ratio of ~103-104) due to charge transfer interaction with the conductive carbon substrates. The ferroelectric polarization-induced E-field coupled with the external bias is responsible for the improved memristive performances. A plausible conduction mechanism is proposed to discuss the carrier transport through the devices.