Fabrication and Feasibility of Through Silicon Via for 3D MEMS Resonator Integration

Soydan, Alper Kaan; Yuksel, Muhammed Berat; Akçakaya, Dilek Işık; Külah, Haluk

doi:10.1109/sensors43011.2019.8956828

Cited by 3 publications

(4 citation statements)

References 9 publications

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“…Therefore, flexible parylene substrate, which carries the metal lines and pads, is designed and fabricated. Moreover, wafer level, void free TSV fabrication process flow is developed, and feasibility for multichip integration is verified in this concept [16].…”

Section: D Integrationmentioning

confidence: 99%

A Fully-Implantable Mems-Based Autonomous Cochlear Implant

Külah¹,

Ulusah²,

Chamanian³

et al. 2022

2022 IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS)

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This paper reports a fully implantable, MEMS-based, low-power, energy harvesting, next generation cochlear implant (CI). The implant includes multi-frequency piezoelectric transducers for sound detection and energy harvesting, rectification and signal conditioning electronics, and RF coil for fitting and external powering. These units have outstanding performances: multi-channel transducer can generate 50.7 mVpp (under 100 dB SPL) and recover the daily sound speech signals; signal conditioning IC consumes outstandingly low power (<500 µW) while converting outputs signals of the transducer to biphasic pulses; piezoelectric energy harvester has the highest power density (1.5 × 10 −3 W/cm 3 ) with generated 16.25 µW under 120 dB-A sound input; energy harvester IC, provides up to 500% more power compared to an ideal fullbridge rectifier.

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Section: D Integrationmentioning

confidence: 99%

A Fully-Implantable Mems-Based Autonomous Cochlear Implant

Külah¹,

Ulusah²,

Chamanian³

et al. 2022

2022 IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS)

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“…8-channel system, with frequencies placed at 300, 600, 600, 1200, 1600, 2200, 3200 and 4800 Hz as in conventional cochlear implants, can fit into 5 mm × 5mm × 0.62 mm and weight only 4.8 mg without testing frames. They are well below the limitations and give flexibility to other parts of a fully implantable system i.e., acoustic energy harvester and 3D packaging [30]. Besides the size and mass limitations, output signal level is arranged to generate the minimum input level of the interface circuit at daily hearing levels and provide a 60 dB range.…”

Section: µMmentioning

confidence: 99%

Thin-Film PZT-Based Multi-Channel Acoustic MEMS Transducer for Cochlear Implant Applications

2022

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This paper presents a multi-channel acoustic transducer that works within the audible frequency range (250-5500 Hz) and mimics the operation of the cochlea by filtering incoming sound. The transducer is composed of eight thin film piezoelectric cantilever beams with different resonance frequencies. The transducer is well suited to be implanted in middle ear cavity with an active volume of 5 mm × 5 mm × 0.62 mm and mass of 4.8 mg. Resonance frequencies and piezoelectric outputs of the beams are modeled with Finite Element Method (FEM). Vibration experiments showed that the transducer is capable of generating up to 139.36 mVpp under 0.1 g excitation. Test results are consistent with the FEM model on frequency (97%) and output voltage (89%) values. Device was further tested with acoustic excitation on an artificial tympanic membrane and flexible substrate. Under acoustic excitation, 50.7 mVpp output voltage generated under 100 dB Sound Pressure Level (SPL). Output voltages observed in acoustical and mechanical characterizations are the highest values reported to the best of our knowledge. Finally, to assess the feasibility of the transducer in daily sound levels, it was excited with a speech sample and output signal was recovered. Time-domain waveforms of the recorded and recovered signals showed close patterns.

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“…S UPERCONDUCTING through-silicon vias (TSVs) are vertically interconnecting electric structures that have attracted the attention of both scientists and engineers interested in linking microelectronic integrated circuits (ICs) with quantum computing devices, THz-range electromagnetic sensors or microelectromechanical systems (MEMS) that operate in cryogenic regimes [1]. TSVs are generally used as means to connect devices that are on the top surface of a silicon wafer with devices that are on the bottom surface of the same wafer [2]. Alternatively, thin silicon layers featuring TSVs can be interposed between functional layers for the same purpose [3].…”

Section: Introductionmentioning

confidence: 99%

“…copper electroplating [17]- [19]. Conformality of metal layers over structured substrates is extremely important to guarantee continuity and high electrical conductivity, particularly for extreme topographical structures such as vertical interconnects [20], [21]. The realization of TSVs with funnelled profile and sputtered Al enabled us to fabricate high-density superconducting interposer layers.…”

Section: Introductionmentioning

confidence: 99%

Highly-Conformal Sputtered Through-Silicon Vias With Sharp Superconducting Transition

Alfaro-Barrantes

Mastrangeli

Thoen

et al. 2021

J. Microelectromech. Syst.

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This paper describes the microfabrication and electrical characterization of aluminum-coated superconducting through-silicon vias (TSVs) with sharp superconducting transition above 1 K. The sharp superconducting transition was achieved by means of fully conformal and void-free DCsputtering of the TSVs with Al, and is here demonstrated in up to 500 µm-deep vias. Full conformality of Al sputtering was made possible by shaping the vias with a tailored hourglass profile, which allowed a metallic layer as thick as 430 nm to be deposited in the center of the vias. Single-via electric resistance as low as 160 mΩ at room temperature and superconductivity at 1.27 K were measured by a three-dimensional (3D) cross-bridge Kelvin resistor structure. This work establishes a CMOS-compatible fabrication process suitable for arrays of superconducting TSVs and 3D integration of superconducting silicon-based devices.

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Fabrication and Feasibility of Through Silicon Via for 3D MEMS Resonator Integration

Cited by 3 publications

References 9 publications

A Fully-Implantable Mems-Based Autonomous Cochlear Implant

A Fully-Implantable Mems-Based Autonomous Cochlear Implant

Thin-Film PZT-Based Multi-Channel Acoustic MEMS Transducer for Cochlear Implant Applications

Highly-Conformal Sputtered Through-Silicon Vias With Sharp Superconducting Transition

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