2020
DOI: 10.1016/j.jallcom.2020.154567
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Fabrication and mechanical properties of tungsten carbide thin films via mist chemical vapor deposition

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Cited by 12 publications
(5 citation statements)
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“…When the temperature is higher than 650 °C, WC 1-x begins to form, and with the increase in preparation temperature, the element ratio of C/W is gradually close to 1. Mechanical characterization shows that the hardness and Young's modulus of WC 1-x films grown at 750 °C are 25 and 409 GPa, respectively [97]. Atomic layer deposition has also been used to prepare NbC thin films by employing NbF 5 and NbCl 5 as the raw materials, TMA as a carbon source and reducing agent.…”
Section: Chemical Vapor Depositionmentioning
confidence: 99%
“…When the temperature is higher than 650 °C, WC 1-x begins to form, and with the increase in preparation temperature, the element ratio of C/W is gradually close to 1. Mechanical characterization shows that the hardness and Young's modulus of WC 1-x films grown at 750 °C are 25 and 409 GPa, respectively [97]. Atomic layer deposition has also been used to prepare NbC thin films by employing NbF 5 and NbCl 5 as the raw materials, TMA as a carbon source and reducing agent.…”
Section: Chemical Vapor Depositionmentioning
confidence: 99%
“…[83] Moreover, in the CVD preparation technique, expediting the carburization process is achieved by employing hydrogen and hydrocarbon vapor reduction precursors. [84][85][86] In this procedure, gaining fine powder of tungsten carbide remains, although this methodology offers reasonable control over size, crystal structure, and shape. W 2 C cannot be converted into WC entirely due to rapidity of carburization reaction procedure and formed intermediate.…”
Section: Preparation Approaches Of Pure Phase Wcmentioning
confidence: 99%
“…Prolonged sintering processes can destroy the material‘s crystal structure, resulting in increased structural distortions and defects [83] . Moreover, in the CVD preparation technique, expediting the carburization process is achieved by employing hydrogen and hydrocarbon vapor reduction precursors [84–86] . In this procedure, gaining fine powder of tungsten carbide remains, although this methodology offers reasonable control over size, crystal structure, and shape.…”
Section: Preparation Approaches Of Pure Phase Wcmentioning
confidence: 99%
“…Существует множество методов получения карбида вольфрама: химическое осаждение из паровой фазы [17] и искровое плазменное спекание [18], карботермическое восстановление оксида вольфрама WO 3 и сопутствующая карбонизация [19], высокоэнергетическое перемалывание в шаровых мельницах [20], плазменно-пучковые методы [21], обработка поверхности высокоинтенсивными ионными пучками [22], электрический взрыв проводников [23]. Все они зачастую реализуются с использованием чистого вольфрама в качестве прекурсора или его оксида, которые уже были получены из вольфрамовой руды.…”
Section: Introductionunclassified