Fabrication and Microstructural Change of PMN-PT Thin Films on Si Substrates by PLD with Mask and Double-Pulse Lazer Excitation

Hayashi, Shogo; Wakiya, Naoki; Kiguchi, Takanori; Tanaka, Mitsuya; Shinozaki, Kazuo

doi:10.4028/www.scientific.net/kem.350.111

Cited by 6 publications

(4 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Electro-optic coefficients were r 13 = 17 pm/V at TE mode and r 33 = 55 pm/V at TM mode. These values are much higher than previously reported values measured at 1.56 µm wavelength: 16 and 21 pm/V, respectively, for TE and TM mode [6]. shows the relation between electro-optic coefficients and the composition of the PMN-PT [1], [2], [7].…”

Section: Optical and Opto-electrical Properties Of Pmn-pt Thin Filmscontrasting

confidence: 37%

“…The deposited PMN-PT seeding layer was grown epitaxially at 500 • C determined by X-ray diffraction (XRD), the temperature used for LSCO film deposition. The epitaxial PMN-PT thin film with the growth conditions the same as the seeding layer showed a smooth surface [6]. However the deposition rate was very slow, ∼1.6 nm/m, compared with conventional PLD without the mask.…”

Section: A Epitaxial Pmn-pt Thin Film Growthmentioning

confidence: 94%

“…Consequently, low crystallinity or an inhomogeneous microstructure is obtained in the [LSCO] type buffer layer. We introduced a stainless steel mask placed between the target and the substrate and double-laser excitation in the PLD deposition to resolve several problems that arise in a PMN-PT thin film deposited by the structure using [LSCO] type buffer [6]. In addition to the process described above, we introduced two-step deposition of a PMN-PT film on [LSCO] type buffer.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fabrication and optical properties of Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films on Si substrates using the PLD method

Shinozaki

Hayashi

Wakiya

et al. 2008

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

View full text Add to dashboard Cite

Epitaxial 0.67Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3)-0.33PbTiO(3) (PMN-PT) thin films with electro-optic effects were fabricated on (PMN-PT) thin films with electro-optic effects were fabricated on (La0(0.5)Sr0(0.5))CoO(3) (LSCO)/CeO(2)/YSZ-buffered Si(001) substrates using double-pulse excitation pulsed laser deposition (PLD) method with a mask placed between the target and the substrate. Epitaxial growth of PMN-PT thin films was undertaken using the two-step growth method of PMN-PT film. The PMN-PT seed layer was deposited at 500 degrees C on the LSCO/CeO(2)/YSZ/Si, which temperature was the same as that used for LSCO deposition. The PMN-PT thin films were deposited on the PMN-PT seed layer at 600 degrees C, which enables growth of high-crystallinity PMN-PT films with smooth surfaces. We obtained optimum fabrication conditions of PMNPT film with micrometer-order thickness. Resultant films showed high crystallinity with full width at half maximum (FWHM) = 0.73 deg and 1.6 mum thickness. Electro-optic properties and the refractive index value were measured at 633 nm wavelength using the prism coupling method. The obtained refractive index was 2.59. The electro-optic coefficients r(13) and r(33) were determined by applying the electrical field between a semitransparent, thin top electrode of Pt and a bottom LSCO electrode. The electro-optic coefficient was r(13) = 17 pm/V at transverse electric field (TE) mode and r(33) = 55 pm/V at transverse magnetic field (TM) mode.

show abstract

Section: Optical and Opto-electrical Properties Of Pmn-pt Thin Filmscontrasting

confidence: 37%

Section: A Epitaxial Pmn-pt Thin Film Growthmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication and optical properties of Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films on Si substrates using the PLD method

Shinozaki

Hayashi

Wakiya

et al. 2008

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

View full text Add to dashboard Cite

show abstract

“…According to the literature, growth of PMN at a lower temperature has been reported to suppress COR. 25) 28) In the present study, it is investigated that the effect of Ti concentration in the Pb(Mg 1/3 Nb 2/3 )O 3 PbTiO 3 solid solution epitaxial thin films grown at a relatively low temperature by MOD processes. We also discussed the influence of B-site replacement qualitatively with a simple calculation based on Pauling's rule for bond strength.…”

Section: )15)mentioning

confidence: 99%

Effect of Ti concentration on the growth of chemically-ordered regions of Pb(Mg1/3Nb2/3)O3–PbTiO3 epitaxial thin films

Fan

Kiguchi

Akama

et al. 2015

J. Ceram. Soc. Japan

Self Cite

View full text Add to dashboard Cite

(1 ¹ x)Pb(Mg 1/3 Nb 2/3 )O 3 xPbTiO 3 (PMNPT) (x = 01) epitaxial thin films with high crystallinity have been prepared by using metallo-organic decomposition (MOD) processes at a temperature half of the crystallization temperature of the corresponding bulk crystals. X-ray diffraction patterns show that Ti-poor and Ti-rich PMNPT thin films have perovskite-type structure with a single phase of pseudocubic and/or tetragonal phase, respectively. The morphotropic phase boundary (MPB) is located around x = 0.6. Chemically-ordered regions (CORs), where Mg and Nb ions at B-sites show 1:1 ordered structure in the ©111ª directions, are clearly detected by using aberration-corrected high angle annular dark field-scanning transmission electron microscopy (HAADF-STEM) images taken along the ©1 10ª directions, while it is difficult to analyze the detailed structure of the CORs by the electron or X-ray diffraction methods owing to the small volume. It showed that the density of COR rapidly decreases with increasing the Ti concentration, keeping the size of each COR, which infers that the COR may vanish at the Ti composition less than MPB. STEM analysis around the film/substrate interface shows the elastic interaction between CORs and local strain fields would be weak.

show abstract

Fabrication and Optical Properties of Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-PbTiO<inf>3</inf> Thin Films on Si Substrates by PLD Method

Shinozaki

Hayashi

Wakiya

et al. 2007

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

View full text Add to dashboard Cite

crystal orientation of the film, and the lattice matching Abstract Epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 and the thermal-expansion-coefficient difference between (PMN-PT) thin films with electro-optic effects were the film and the substrate. Although, almost thin film fabricated on (Lao 5Sr0o5)CoO3(LSCO)/CeO2/YSZ-bufferd research concerning electrooptic effect has been done on Si(001) substrates by double-pulse excitation PLD oxide single-crystal substrate, these substrates are method with a mask mechanism. Epitaxial growths of expensive for industrial use. Growth of electrooptic thin PMN-PT thin films were successively grown by the two films on Si substrates must be carried out in order to step growth method of PMN-PT film. The PMN-PT seed realize future hybrid devices with Si LSI and electrooptic layer was deposited on the LSCO layer at 500°C which circuits on the same substrate. There are many reports in was the same temperature of the LSCO deposition. PMN-the literature concerning epitaxially-grown thin films PT thin films was deposited on PMN-PT seed layer at with perovskite structure deposited on oxide single 600°C which enable to grow high crystalinity PMN-PT crystal substrates, such as SrTiO3 (STO) single crystal, film with smooth surfaces. We obtained the optimum however, there have been few reports on the preparation fabrication condition of PMN-PT film with gm order of epitaxial PMN-PT thin films on Si(001) substrates. thickness. Obtained film showed high crystallinity withIn our previous experiment, PMN-PT thin films were FWHM = 0.73 degree of 1.6gm thickness. Electro-optic epitaxially grown on Si substrates by introducing property and refractive index measured by prism appropriate buffer layers using pulsed laser deposition coupling method were 2.59 at the wavelength of 633 nm. (PLD)[2]. However, there was a thickness limitation at The electro-optic coefficient r13 and r33 was measured by several hundred nm for keeping the microstructure and applying the electrical field between semi-transparent crystalinity to keep epitaxial PMN-PT thin films. At least thin top electrode of Pt and bottom LSCO electrode. over one gm of PMN-PT film thickness is necessary for Electro-optic coefficient was rl3=17pm/V at TE mode optical devices. We have succeeded to grow the PMN-PT and r33=55pm/V at TM mode.epitaxial film with gm order thickness by introducing the appropriate buffer layers, SrRuO3(SRO)/STO/LSCO/

show abstract

Fabrication and Microstructural Change of PMN-PT Thin Films on Si Substrates by PLD with Mask and Double-Pulse Lazer Excitation

Cited by 6 publications

References 3 publications

Fabrication and optical properties of Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films on Si substrates using the PLD method

Fabrication and optical properties of Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films on Si substrates using the PLD method

Effect of Ti concentration on the growth of chemically-ordered regions of Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>–PbTiO<sub>3</sub> epitaxial thin films

Fabrication and Optical Properties of Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-PbTiO<inf>3</inf> Thin Films on Si Substrates by PLD Method

Contact Info

Product

Resources

About

Fabrication and Microstructural Change of PMN-PT Thin Films on Si Substrates by PLD with Mask and Double-Pulse Lazer Excitation

Cited by 6 publications

References 3 publications

Fabrication and optical properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films on Si substrates using the PLD method

Fabrication and optical properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films on Si substrates using the PLD method

Effect of Ti concentration on the growth of chemically-ordered regions of Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>&ndash;PbTiO<sub>3</sub> epitaxial thin films

Fabrication and Optical Properties of Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-PbTiO<inf>3</inf> Thin Films on Si Substrates by PLD Method

Contact Info

Product

Resources

About

Fabrication and optical properties of Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films on Si substrates using the PLD method

Fabrication and optical properties of Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films on Si substrates using the PLD method

Effect of Ti concentration on the growth of chemically-ordered regions of Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>–PbTiO<sub>3</sub> epitaxial thin films