Fabrication and Morphology of KOH Etching Single Crystalline Silicon Solar Cells

Abstract

Anisotropic etching process by potassium hydroxide (KOH) and isopropyl alcohol (IPA) mixed solution in the [100] orientation silicon wafer was studied experimentally. The effect parameters of KOH concentration, IPA concentration, reaction time and temperature for wafer surface morphology were analyzed by scanning electron microscope. The results show that: a uniform, high density and good pyramid shaped single crystalline silicon surface can be obtained at 3% KOH solution buffered with 8% IPA at 80°C for 30min. By comparing single crystalline silicon micro-surface with NaOH and IPA mixed solution system of industrial fabrication, the pyramid structure is more regular and uniform by using KOH and IPA mixed solution system, which is expected to obtain better optical properties.