Fabrication and optical characterization of thin two-dimensional Si3N4 waveguides

Daldosso, N.; Melchiorri, M.; Riboli, Francesco; Sbrana, Francesca; Pavesi, L.; Pucker, G.; Kompocholis, C.; Crivellari, M.; Bellutti, P.; Lui, A.

doi:10.1016/j.mssp.2004.09.023

Cited by 65 publications

(42 citation statements)

References 16 publications

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“…Crack formation in high stress LPCVD SiN thin films is a long standing problem that has so far often limited film thickness to at most 250 nm [22]. However, as shown in reference [23], crack development in SiN thin films strongly depends on the substrate topography.…”

Section: Stress Control By Dense Prestructuringmentioning

confidence: 99%

Photonic Damascene process for integrated high-Q microresonator based nonlinear photonics

Pfeiffer

Kordts

Brasch

et al. 2016

Optica

318

218

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High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD) has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with 1.35 µm thick waveguides and optical Q factors of 3.7 × 10 6 and demonstrate single temporal dissipative Kerr soliton (DKS) based coherent optical frequency comb generation. Our newly developed process is interesting also for other material platforms, photonic integration and mid infrared Kerr comb generation.

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Section: Stress Control By Dense Prestructuringmentioning

confidence: 99%

Photonic Damascene process for integrated high-Q microresonator based nonlinear photonics

Pfeiffer

Kordts

Brasch

et al. 2016

Optica

318

218

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“…In this case, the optical signal propagating from waveguide to waveguide across the gaps plays the role of the broad continuum whilst the first-order LSPR of the gold nanostrip acts as discrete (although spectrally broad) resonance [35]. We fitted the transmission response to a Fano resonance with F = 0.55, = 11.23·10 14 rad/s and = 470 nm, where F describes the degree of asymmetry, whilst and correspond to the position and width of the isolated nanoparticle LSPR respectively [33]. The resulting curve is depicted in Fig.…”

Section: Input Lightmentioning

confidence: 99%

“…Amongst the available technological platforms for high-index integrated optics, silicon photonics presents several advantages, mainly an easy fabrication using standard microelectronics tools, ultimately enabling low-cost production at large-volumes [11][12][13]. In addition, whilst silicon can be used as a guiding element for near-infrared devices, silicon nitride waveguides enabling visible light guidance can be also produced in the same technological platform [14][15].…”

Section: Introductionmentioning

confidence: 99%

Experimental measurement of plasmonic nanostructures embedded in silicon waveguide gaps

Espinosa-Soria¹,

Griol²,

Martı́nez³

2016

Opt. Express

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In this work, we report numerical simulations and experiments of the optical response of a gold nanostrip embedded in a silicon strip waveguide gap at telecom wavelengths. We show that the spectral features observed in transmission and reflection when the metallic nanostructure is inserted in the gap are extremely different to those observed in free-space excitation. First, we find that interference between the guided field and the electric dipolar resonance of the metallic nanostructure results in high-contrast (> 10) spectral features showing an asymmetric Fano spectral profile. Secondly, we reveal a crossing in the transmission and reflection responses close to the nanostructure resonance wavelength as a key feature of our system. This approach, which can be realized using standard semiconductor nanofabrication tools, could lead to fully exploit the extreme properties of subwavelength metallic nanostructures in an on-chip configuration, with special relevance in fields such as biosensing or optical switching. V. V. Moshchalkov, and J. a. Sánchez-Gil, "Mode parity-controlled fano-and lorentz-like line shapes arising in plasmonic nanorods," Nano Lett. 14(5), 2322-2329 (2014). References and links

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“…Si 3 N 4 provides low material absorption even for visible wavelengths [26] and is therefore a suitable material to take advantage of the broadband flat absorption of graphene. Thus, the operation wavelength of graphene based nanophotonic devices can be extended beyond infrared wavelengths usually within the C-band around 1550 nm, to visible or even ultraviolet wavelengths.…”

Section: Introductionmentioning

confidence: 99%

High-quality Si_3N_4 circuits as a platform for graphene-based nanophotonic devices

Gruhler¹,

Benz²,

Jang³

et al. 2013

Opt. Express

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Hybrid circuits combining traditional nanophotonic components with carbon-based materials are emerging as a promising platform for optoelectronic devices. We demonstrate such circuits by integrating singlelayer graphene films with silicon nitride waveguides as a new architecture for broadband optical operation. Using high-quality microring resonators and Mach-Zehnder interferometers with extinction ratios beyond 40 dB we realize flexible circuits for phase-sensitive detection on chip. Hybrid graphene-photonic devices are fabricated via mechanical transfer and lithographic structuring, allowing for prolonged light-matter interactions. Our approach holds promise for studying optical processes in lowdimensional physical systems and for realizing electrically tunable photonic circuits. ©2013 Optical Society of America

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Fabrication and optical characterization of thin two-dimensional Si3N4 waveguides

Cited by 65 publications

References 16 publications

Photonic Damascene process for integrated high-Q microresonator based nonlinear photonics

Photonic Damascene process for integrated high-Q microresonator based nonlinear photonics

Experimental measurement of plasmonic nanostructures embedded in silicon waveguide gaps

High-quality Si_3N_4 circuits as a platform for graphene-based nanophotonic devices

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