Fabrication and optical properties of Er-doped multilayers Si-rich SiO2/SiO2: size control, optimum Er–Si coupling and interaction distance monitoring

Gourbilleau, Fabrice; Madelon, R.; Dufour, Christian; Rizk, R.

doi:10.1016/j.optmat.2004.08.026

Cited by 41 publications

(33 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such results show that, to increase EQE in SiO x :Er system, one has to ensure formation of well-defined Si-ncs in perfectly stoichiometric SiO 2 . A promising way to obtain that ideal system would be to separate Si-ncs containing layer (SiO x ) from the Ercontaining layer (Er:SiO 2 ) in multiple stacks of monolayers, similar to SiO x /SiO 2 multilayers recently studied [35,42,43].…”

Section: +mentioning

confidence: 99%

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Cueff¹,

Labbé²,

Jambois³

et al. 2012

Opt. Express

View full text Add to dashboard Cite

Abstract:We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiO x ) layers. The effects of both the active layer thickness and the Siexcess content on the electrical excitation of erbium are studied. We demonstrate that when the thickness is decreased from a few hundred to tens of nanometers the conductivity is greatly enhanced. Carrier transport is well described in all cases by a Poole-Frenkel mechanism, while the thickness-dependent current density suggests an evolution of both density and distribution of trapping states induced by Si nanoinclusions. We ascribe this observation to stress-induced effects prevailing in thin films, which inhibit the agglomeration of Si atoms, resulting in a high density of sub-nm Si inclusions that induce traps much shallower than those generated by Si nanoclusters (Si-ncs) formed in thicker films. There is no direct correlation between high conductivity and optimized EL intensity at 1.5 µm. Our results suggest that the main excitation mechanism governing the EL signal is impact excitation, which gradually becomes more efficient as film thickness increases, thanks to the increased segregation of Si-ncs, which in turn allows more efficient injection of hot electrons into the oxide matrix. Optimization of the EL signal is thus found to be a compromise between conductivity and both number and degree of segregation of Si-ncs, all of which are governed by a combination of excess Si content and sample thickness. This material study has strong implications for many electricallydriven devices using Si-ncs or Si-excess mediated EL. USSR 5, 685-687 (1938). ©2012 Optical Society of America

show abstract

Section: +mentioning

confidence: 99%

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Cueff¹,

Labbé²,

Jambois³

et al. 2012

Opt. Express

View full text Add to dashboard Cite

show abstract

“…As reported in different works, 11,12,18,43 the coupling constant scales with distance following an exponential decay law: this is a clear signature of an electronic exchange mechanism between donor and acceptor generating from wave function overlap ͑Dexter transfer͒. 16 The other possible transfer mechanisms, dipole-dipole interaction ͑Förster͒ and indirect radiative excitation do not likely occur in our system: the former being too slow with respect to the fast transfer time we measured ͑tens of nanoseconds͒, while the latter does not explain the enhancement of Er ions effective excitation cross section, being less efficient than direct excitation itself.…”

mentioning

confidence: 52%

“…The value of the constant R int ͑characteristic interaction distance͒ has been taken from literature and it is equal to 0.5 nm ͑2.1 nm͒ for amorphous Si-nanoclusters 12,43 ͑Si-nanocrystals 17 ͒. Clearly, this simple model can be applied reliably only for Er-Si-np distances smaller than some nanometers, where it is possible to consider interaction among only one single Si-np and many Er ions.…”

mentioning

confidence: 99%

Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples

Pitanti

Navarro-Urriós

Prtljaga

et al. 2010

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

We report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles ͑Si-np͒, both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast ͑Ͻ200 ns͒ energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron-"recycling" effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface.

show abstract

“…In the case of the sample containing only Er ions, there is no signal at 800 nm and a small signal is detected at 1540 nm. It is attributed to the 4 I 13/2 → 4 I 15/2 intra-shell Er ion transition [6][7][8]. For the sample containing only Si-nc, a peak is visible at 800 nm.…”

Section: Resultsmentioning

confidence: 95%

“…The maximum Si-nc size is then equal to the SiO barrier thickness. Such Er-doped multilayer systems can be prepared by RF sputtering [4], magnetron sputtering of Si in vacuum and Er-doped SiO 2 in an oxygen atmosphere [5], reactive magnetron sputtering of SiO 2 and Er 2 O 3 in an hydrogen-argon atmosphere [6] or by evaporation of SiO in an oxygen atmosphere [7,8]. In the last example, Er is introduced by the implantation method.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of undoped and erbium-doped SiO/SiO/sub 2/ multilayers

Jambois¹,

Ardyanian²,

Wora-Adeola³

et al.

IEEE International Conference on Group IV Photonics, 2005. @Nd

View full text Add to dashboard Cite

show abstract

Fabrication and optical properties of Er-doped multilayers Si-rich SiO2/SiO2: size control, optimum Er–Si coupling and interaction distance monitoring

Cited by 41 publications

References 28 publications

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples

Photoluminescence of undoped and erbium-doped SiO/SiO/sub 2/ multilayers

Contact Info

Product

Resources

About