Fabrication and opto-electrical properties of amorphous (Zn,B)O thin film by pulsed laser deposition

Tang, Haochun; Kim, Junghwan; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

doi:10.2109/jcersj2.123.523

Cited by 3 publications

(1 citation statement)

References 25 publications

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“…The fact that ZnO thin films are readily polycrystalline with a hexagonal würtzite structure close to room temperature on various substrates gives them the disadvantage of reducing the mobility of the charge carriers (electrons) due to dislocations or impurities at the grain boundaries, hence influencing their resulting performances in transistors. Some attempts have been made to obtain amorphous zinc oxide thin films and, thus, to eliminate the grain boundaries by pulsed laser deposition and sputtering at cryogenic temperatures [15][16][17] by using chemical methods [18,19] and, recently, by enhancing the oxygen deficiency in PED [20]. However, these attempts are neither expensive in their applications (cryogenic temperatures) nor does the large oxygen deficiency benefit the fabrication of the transistor's components, which require almost ideal ZnO stoichiometry.…”

Section: Introductionmentioning

confidence: 99%

Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition

Gherendi,

Dobrin,

Nistor

2024

Micromachines

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Thin film transistors on paper are increasingly in demand for emerging applications, such as flexible displays and sensors for wearable and disposable devices, making paper a promising substrate for green electronics and the circular economy. ZnO self-assembled thin film transistors on a paper substrate, also using paper as a gate dielectric, were fabricated by pulsed electron beam deposition (PED) at room temperature. These self-assembled ZnO thin film transistor source–channel–drain structures were obtained in a single deposition process using 200 and 300 µm metal wires as obstacles in the path of the ablation plasma. These transistors exhibited a memory effect, with two distinct states, “on” and “off”, and with a field-effect mobility of about 25 cm2/Vs in both states. For the “on” state, a threshold voltage (Vth on = −1.75 V) and subthreshold swing (S = 1.1 V/decade) were determined, while, in the “off” state, Vth off = +1.8 V and S = 1.34 V/decade were obtained. A 1.6 μA maximum drain current was obtained in the “off” state, and 11.5 μA was obtained in the “on” state of the transistor. Due to ZnO’s non-toxicity, such self-assembled transistors are promising as components for flexible, disposable smart labels and other various green paper-based electronics.

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Section: Introductionmentioning

confidence: 99%

Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition

Gherendi,

Dobrin,

Nistor

2024

Micromachines

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Oxidation growth micromechanism of ZnO nanoparticles at low temperature

Gao,

Jiang

et al. 2024

Computational Materials Science

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From transparent to black amorphous zinc oxide thin films through oxygen deficiency control

Nistor

Gherendi

Dobrin

et al. 2022

Journal of Applied Physics

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Despite the fact that zinc oxide is a well-known transparent oxide, several recent studies on “black” ZnO have renewed its potential for photocatalytic applications. We report on the control of oxygen deficiency in ZnO thin films grown at 300 °C on c-cut sapphire single-crystal substrates by pulsed electron beam deposition (PED) through a slight variation of argon pressure in PED. At a pressure of 2 × 10−2 mbar transparent, stoichiometric (ZnO) and crystalline films are obtained, while at 9 × 10−3 mbar black, oxygen-deficient (ZnO0.85) and amorphous films result. Stoichiometry, structural, and optoelectronic properties of transparent and black ZnO thin films were comparatively analyzed as a function of oxygen deficiency. Black ZnO thin films exhibit enhanced absorption in the visible and near-infrared due to oxygen deficiency, thus extending the range of applications of zinc oxide thin films from transparent electronics to solar absorbers and photocatalysis.

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Fabrication and opto-electrical properties of amorphous (Zn,B)O thin film by pulsed laser deposition

Cited by 3 publications

References 25 publications

Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition

Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition

Oxidation growth micromechanism of ZnO nanoparticles at low temperature

From transparent to black amorphous zinc oxide thin films through oxygen deficiency control

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