FABRICATION AND OPTOELECTRONIC PROPERTIES OF Mg_xZn_1-xO ULTRATHIN FILMS BY LANGMUIR–BLODGETT TECHNOLOGY

Abstract

By transferring Mg x Zn 1Àx O sol and stearic acid onto a hydrophilic silicon wafer or glass plate, the LangmuirÀBlodgett (LB) multilayers of Mg x Zn 1Àx O (x:0, 0.2, 0.4) were deposited. After calcinations at 350 C for 0.5 h and at 500 C for 3 h, Mg x Zn 1Àx O ultrathin¯lms were fabricated. The optimized parameters for monolayer formation and multilayer deposition were determined by the surface pressure-surface (Å-A) area and the transfer coe±cient, respectively. The expended areas of stearic acid with Mg x Zn 1Àx O sols under Å-A isotherms inferred the interaction of stearic acid with Mg x Zn 1Àx O sols during the formation of monolayer at airÀwater interface. X-ray di®raction (XRD) was used to determine the crystal structures of Mg x Zn 1Àx O nanoparticles and ultrathin¯lms. The surface morphologies of Mg x Zn 1Àx O ultrathin¯lms were observed by scanning probe microscopy (AFM). And the optoelectronic properties of Mg x Zn 1Àx O were detected and discussed based on photoluminescence (PL) spectra.