Fabrication and performance characteristics of InGaAsP multiquantum well double channel planar buried heterostructure lasers

Dutta, Niloy K.; Napholtz, S. G.; Yen, R.; Brown, Robert L.; Shen, T. M.; Olsson, N.A.; Craft, D. C.

doi:10.1063/1.95835

Cited by 24 publications

(4 citation statements)

References 22 publications

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“…The main arguments against conventional LPE relate to the high initial growth rate which results in poor thickness control and reproducibility for thin layer epitaxy. However, it is also possible to use LPE to grow multilayer III-V structures which exhibit quantum size effects [29] and with appropriate LPE modifications has been successfully employed to grow quantum well heterostructure lasers [30,31]. Also note that it is possible to grow chemically abrupt interfaces by LPE and that quantum wells as thin as 20 Å have been successfully prepared [32].…”

mentioning

confidence: 99%

Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate

Gambaryan¹,

Aroutiounian²,

Boeck³

et al. 2008

J. Phys. D: Appl. Phys.

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The liquid phase epitaxy technique is used for self-assembled InAsSbP-based strain-induced islands and quantum dots (QD) formation on InAs(1 0 0) substrates. The morphology, dimensions (size and shape), distribution density and composition of these objects are investigated by scanning electron and atomic force microscopies (SEM and AFM) and found to be self-organized from pyramids to globes. In addition, we perform energy dispersive x-rays analysis measurements at the top and bottom angles of the InAsSbP quaternary pyramids and lattice mismatch ratio calculations. They show that the strength at the top of the pyramids is lower than at the bottom angles, and that the island size becomes smaller when the lattice mismatch decreases. The QD average density ranges from 5 to 7 × 109 cm−2, with height and width dimensions from 0.7 nm to 25 nm and 20 nm to 80 nm, respectively. A critical size (∼500 nm) for the transformation of the InAsSbP-based strain-induced pyramid shape to globe shape is determined.

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mentioning

confidence: 99%

Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate

Gambaryan¹,

Aroutiounian²,

Boeck³

et al. 2008

J. Phys. D: Appl. Phys.

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“…A major issue in QWL is therefore to understand this outstanding difference: up to now, all the reported MQW lasers in GaInAsP-InP systems have features that are not better than those of DH lasers [Dutta et al 1985 and. A major issue in QWL is therefore to understand this outstanding difference: up to now, all the reported MQW lasers in GaInAsP-InP systems have features that are not better than those of DH lasers [Dutta et al 1985 and.…”

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confidence: 99%

Optoelectronic Integrated Circuits (OEICs)

Razeghi¹

2010

The MOCVD Challenge

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“…Actually, the well established LPE growth technique has been improved and successfully employed for the growth of quantum well heterostructure lasers, 22 InAsSbP quaternary composition lens-shape and ellipsoidal QDs, [23][24][25] quantum rings 26,27 and QD molecules in the form of InAsSb-QD/InAsP-leaves cooperative structures (so-called nano-camomiles). 28,29 Note, that all these nanostructure were grown on industrial InAs(100) substrates' epi-ready surface.…”

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Growth and characterization of cooperative quantum dot chains in quaternary InAsSbP material system

Gambaryan

Aroutiounian

2013

AIP Advances

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The cooperative quantum dot chains (CQDCs) are grown from In-As-Sb-P quaternary liquid phase on InAs(100) substrate with a deviation of surface orientation from (100) of about 0.3° along [010] direction. The wet chemical etching is utilized to create an additional artificial disorientation of the substrate. AFM investigations show that CQDCs mainly consist of central coupled InAsSb quantum dot (QD) sub-chains surrounded by InAsP-leaf chains. Cooperative chains have a ∼120 nm total width, over 5 μm length and directed along [010]. The separation between QDs within sub-chains is about 40 nm. The red shift of CQDCs’ absorption edge is detected.

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Fabrication and performance characteristics of InGaAsP multiquantum well double channel planar buried heterostructure lasers

Abstract: Articles you may be interested inHighpower operation of InP/InGaAsP doublechannel planar buriedheterostructure lasers with asymmetric facet coatings Appl.

Cited by 24 publications

References 22 publications

Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate

Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate

Optoelectronic Integrated Circuits (OEICs)

Growth and characterization of cooperative quantum dot chains in quaternary InAsSbP material system

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