The sintering process of the MoOx target has an impact on the quality of the sputtered film. In this study, powders of MoO3 (78 wt%) and MoO2 (22 wt%) were milled and hot-pressed to prepare the MoOx target. The effects of the sintering temperature of the MoOx targets on the properties of the sputtered MoOx films were investigated by X-ray diffraction, scanning electron microscopy, four-probe needle, and spectrophotometer tests. The research results revealed that the MoOx target at the sintered temperature of 1000 °C had a clear crystal structure and dense grains, exhibiting good sinterability, crystallization behavior, and film-forming property. The sputtered film deposited by the MoOx target could obtain high quality with a smooth interface and uniform thickness. The film had smaller resistivity, higher reflectivity, and appropriate transmissivity compared to the ones fabricated by other targets that were sintered at 800 °C, 900 °C, and 1100 °C.