Fabrication and properties of CoPt patterned media with perpendicular magnetic anisotropy

Perpendicular anisotropy of Co3Pt deposited on the NiFeMo/Ru buffer

“…This ordered phase, however, requires molecular beam epitaxy (MBE) system to grow, thus the low through put and high cost is inevitable. There were many trials [1,2] on the sputter deposition of Co 3 Pt as an alternative but it could not keep up with the MBE results. This is mainly due to the inferior ordering of Co 3 Pt.…”

B ion implantation effects on L10 chemical ordering of FePt thin films

“…Control of the degree of the chemical ordering of FePd thin films using the irradiation of 130 keV He + ions [3] has also been demonstrated. These beam induced patterning methods have advantageous features for patterned media fabrication compared with the conventional fabrication method, which consists of e-beam lithography and reactive ion etching processes [4]. It is possible to realize a non-contact patterning process that preserves the flatness of the media surface.…”

Area selective formation of magnetic nanodot arrays on Si wafer by electroless deposition

“…Preparation of magnetic nanodot arrays with perpendicular anisotropy has been extensively studied with various processes. For their fabrication, physical processes, such as sputter-deposition of magnetic film and the patterning of the deposited film by reactive ion etching or focused ion beam lithography [2,3], or sputter-deposition of magnetic film on pre-patterned substrate [4], have been conventionally used. On the other hand, chemical process attracts much attention as an alternative candidate for the method of preparation of magnetic dot arrays featuring its mass productivity and the ability to form metallic fine structures with high aspect ratio, excellent area selectivity and uniformity.…”