2021
DOI: 10.1016/j.ceramint.2021.01.040
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Fabrication and properties of macro-porous SiC using Al2O3–Y2O3–SiO2 as bonding additives

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Cited by 26 publications
(16 citation statements)
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“…26,29,147 The results obtained from various studies on the effect of oxide additives on the electrical properties of porous SiC are summarised in Figure 3. 26,31,37,41,57,63,76,139,148,149 Kim et al 63,139 in two different studies investigated the effect of Y 2 O 3 addition on the electrical properties of β-SiC for the samples prepared using two different sintering techniques (hot pressing 63 and spark plasma sintering [SPS] 139 ) under the influence of a N 2 atmosphere. The samples processed via hot pressing showed an electrical resistivity of 2.0 × 10 -2 Ω.cm (∼10% porosity), while the samples sintered via SPS possessed an electrical resistivity of 1.5 × 10 -2 (∼14% porosity) to 2.8 × 10 -2 Ω.cm (∼25% porosity).…”
Section: Oxide Additivesmentioning
confidence: 99%
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“…26,29,147 The results obtained from various studies on the effect of oxide additives on the electrical properties of porous SiC are summarised in Figure 3. 26,31,37,41,57,63,76,139,148,149 Kim et al 63,139 in two different studies investigated the effect of Y 2 O 3 addition on the electrical properties of β-SiC for the samples prepared using two different sintering techniques (hot pressing 63 and spark plasma sintering [SPS] 139 ) under the influence of a N 2 atmosphere. The samples processed via hot pressing showed an electrical resistivity of 2.0 × 10 -2 Ω.cm (∼10% porosity), while the samples sintered via SPS possessed an electrical resistivity of 1.5 × 10 -2 (∼14% porosity) to 2.8 × 10 -2 Ω.cm (∼25% porosity).…”
Section: Oxide Additivesmentioning
confidence: 99%
“…Ihle et al 57 studied the effect of Y 2 O 3 + Al 2 O 3 additives on the electrical resistivity of pressureless sintered α-SiC and found that the electrical resistivity increased from 1.0 × 10 -1 to 1.4 × 10 1 Ω.cm with an increase in the porosity from 39 to 43% for the samples sintered in the Ar + CO atmosphere. Yun et al 149 studied the effect of Y 2 O 3 + Al 2 O 3 + SiO 2 additives on the electrical resistivity of pressureless sintered α-SiC and found that the samples sintered in Ar at 1500 and 1600 • C showed the electrical resistivities of 2.7 × 10 8 (47% porosity) and 1.3 × 10 8 Ω⋅cm (38% porosity), respectively.…”
Section: Oxide Additivesmentioning
confidence: 99%
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“…Porous silicon carbide (SiC) ceramics have attracted attention not only in the academic field but also industrially due to their remarkable characteristics such as low bulk density, high melting point, high oxidation resistance, bio-inert characteristic, corrosion resistance, high chemical stability, excellent mechanical strength, high specific strength, high thermal shock resistance, tailored thermal conductivity, and controlled permeability. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] These characteristics have made porous SiC ceramics suitable candidates to perform a wide range of engineering applications including membranes for water purification and gas separation, 1,3,5,11,[16][17][18][19] ceramic carriers, 20 lightweight structural materials, 4,6,7,9 hot gas filters, 10,11,[21][22][23][24][25] catalytic supports, [26][27][28] and thermal insulators. [29][30][31][32][33][34]…”
Section: Introductionmentioning
confidence: 99%
“…The samples were fabricated by sintering ultradispersed SiC powder with the particle size of ∼ 0.2 µm. Porosity of the silicon carbide ceramics may be varied by adding certain sintering additives [9,10]. In our case, those additives were Al 2 O 3 (6.5 and 10.8 wt.%), B and C (2.5 and 6.8 wt.%); the sintering temperature ranged from 1920 to 2250 • C. As a result, ceramics with porosity (P) of 1% (sample SiC1) and 9% (SiC9) were prepared.…”
mentioning
confidence: 99%