Fabrication and properties of silicon-based (Bi,Sm)4Ti3O12 thin film

Structure and electrical properties of Zn‐doped BiFeO3 films

“…When the test frequency exceeds 10 5 Hz, the dissipation factor significantly increases, and the dielectric constant markedly decreases. This result should be attributed to the inversion of the domain, which cannot keep up with the inversion of the electric field . When the frequency is 10 5 Hz, the relative dielectric constants of the films with Zn contents of 0, 0.5, 1, 1.5, and 2 mol% are 125, 120, 133, 129, and 116, and the dissipation factors are 0.018, 0.014, 0.015, 0.016, and 0.015, respectively.…”

The influence of crystallization route on the Ce-doped Bi2Ti2O7 thin film by metal organic decomposition

“…At low frequency, a great deal of charges trapped at interface can follow the alternating current variation, resulting in the large dielectric constants. Evidently, these trapped charges cannot follow the fast variation of the ac driving voltage for the measuring frequency higher than 100 kHz [27,9].…”

Low-temperature fabrication and properties of the highly oriented Bi3.15Nd0.85Ti3O12 thin films deposited on different substrates

“…[11,12]. The remanent polarization is enhanced due to that the structural distortion within the perovsike block takes place by doping with lanthanides.…”