Fabrication and properties of sulfur (S)-doped ZnO nanorods

“…The affinity of carbon or silica for ibuprofen was low. It can be compared from the electronegativities of C (2.5), Si (1.8), and Zn (1.6) [9] compared to O (3.5) in the O-H group, which has different electronegativities, respectively are 1.0, 1.7 and 1.9. With a high difference in electronegativity from Gunningite when interacting with Ibuprofen, it gives the advantage of attracting many ibuprofen molecules during the adsorption process.…”

Section: ■ Introductionmentioning

confidence: 99%

Comparative Study of Soft Template on Gunningite Synthesis for Ibuprofen Adsorption Application

Ulfa,

Apriliani

2023

Indones. J. Chem.

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This study aimed to investigate the effect of soft template variations on Zinc Sulfate Hydrate (Gunningite) synthesis and the maximum adsorption capacity of ibuprofen. This study employed the soft template method and hydrothermal at 100 °C, followed by calcination at 550 °C. Here, ZnSO4 heptahydrate was used as the precursor for different templates. XRD analysis exhibited that the crystal sizes of Gunningite-F127G, Gunningite-F127, Gunningite-P123G, Gunningite-P123, and Gunningite-G were 18.35; 25.33; 25.67; 27.30; and 24.24 nm with crystallinity degrees of 36.89; 42.62; 46.83; 41.27; and 40.62%, respectively. FTIR examination indicated that the five samples contained functional groups of OH stretching at 3170 cm–1, Zn-O-Zn at 1637 cm–1, Zn-S=O symmetric and asymmetric at 900 and 1056 cm–1, and Zn-O at 521 cm–1. Furthermore, SEM-EDX investigation revealed that the morphology of all Gunningite samples was inhomogeneous due to agglomeration. Besides that, the elemental compositions in the samples were dominated by Zn and O elements. The maximum adsorption capacity obtained from each sample was 221.1 mg/g (Gunningite-F127G); 226.06 mg/g (Gunningite-F127); 234.23 mg/g (Gunningite-P123G); 229.76 mg/g (Gunningite-P123); and 222.85 mg/g (Gunningite-G). Moreover, the Gunningite kinetic model of ibuprofen adsorption followed Ho and McKay's pseudo-second-order kinetic model.

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“…Proper doping in wide bandgap semiconductors like ZnO can improve the electrical conductivity from semiconducting to semimetal by maintaining its transparency. , The presence of half ionic and half covalent bond in Zn–O is beneficial in terms of ease of doping compared to other covalent bond wide bandgap semiconductors . Although the doping of 1D ZnO by various dopants like Al, Ga, Sn, Sb, In, etc., is well-known, − anion doping of ZnO from chalcogen elements like sulfur (S) in ZnO is relatively rare. − Owing to the atomic size difference between S (atom radii = 1.09 Å) and oxygen (atom radii = 0.65 Å), and the difference in their electronegativities (2.58 and 3.54 eV, respectively for S and O, on a Pauling scale), S-doping in ZnO should ideally enhance the electrical properties of the doped material . However, the difference between S stabilization and ZnO growth temperatures offer stiff challenge in S-doping.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Solution-Processed Thiophene-Sulfur-Doped Planar ZnO Nanorods as Electron-Transporting Layers for Enhanced Performance of Organic Solar Cells

Ambade

Bagde

et al. 2017

ACS Appl. Mater. Interfaces

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1-D ZnO represents a fascinating class of nanostructures that are significant to optoelectronics. In this work, we investigated the use of an eco-friendly, metal free in situ doping through a pure thiophene-sulfur (S) on low temperature processed (<95 °C) and annealed (<170 °C), planar 1-D ZnO nanorods (ZnRs) spin-coated as a hole-blocking and electron transporting layer (ETL) for inverted organic solar cells (iOSCs). The TEM, HRTEM, XPS, FT-IR, EDS and Raman studies clearly reveal that the thiophene-S (Thi-S) atom is incorporated on planar ZnRs. The investigations in electrical properties suggest the enhancement in conductivity after Thi-S doping on 1-D ZnRs. The iOSCs of poly(3-hexylthiophene-2,5-diyl) and phenyl-C-butyric acid methyl ester (P3HT: PCBM) photoactive layer containing thiophene-S doped planar ZnRs (Thi-S-PZnRs) as ETL exhibits power conversion efficiency (PCE) of 3.68% under simulated AM 1.5 G, 100 mW cm illumination. The ∼47% enhancement in PCE compared with pristine planar ZnRs (PCE = 2.38%) ETL is attributed to a combination of desirable energy level alignment, morphological modification, increased conductivity and doping effect. The universality of Thi-S-PZnRs ETL is demonstrated by the highest PCE of 8.15% in contrast to 6.50% exhibited by the iOSCs of ZnRs ETL for the photoactive layer comprising of poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b;4,5-b]dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)]: phenyl-C71-butyric acid methyl ester (PTB7-Th: PCBM). This enhancement in PCE is observed to be driven mainly through improved photovoltaic parameters like fill factor (ff) as well as photocurrent density (J), which are assigned to increased conductivity, exciton dissociation, and effective charge extraction, while; better ohmic contact, reduced charge recombination, and low leakage current density resulted in increased V.

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Fabrication and properties of sulfur (S)-doped ZnO nanorods

Cited by 7 publications

References 30 publications

Cavity structured S-NiO with improved energy density for aqueous asymmetric hybrid supercapacitors by CDA mechanism

Cavity structured S-NiO with improved energy density for aqueous asymmetric hybrid supercapacitors by CDA mechanism

Comparative Study of Soft Template on Gunningite Synthesis for Ibuprofen Adsorption Application

Low-Temperature Solution-Processed Thiophene-Sulfur-Doped Planar ZnO Nanorods as Electron-Transporting Layers for Enhanced Performance of Organic Solar Cells

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