Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer

Yao, Qijun; Li, D.J.

doi:10.1016/j.jnoncrysol.2005.08.014

Cited by 16 publications

(6 citation statements)

References 13 publications

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“…So far, the main processes to deposit crystalline ZnO layers for TFTs include vacuum-based deposition, such as radiofrequency magnetron sputtering, 27,29,[32][33][34][35][36] ion beam sputtering, 37 and pulsed laser deposition; 38,39 gas phase-based deposition, such as chemical vapor deposition 40 and atomic layer deposition; 41,42 solutionbased deposition, such as chemical bath deposition [43][44][45][46][47][48] and sol-gel processes. 13,[49][50][51][52] Vacuum-deposition methods generally achieve higher FET characteristics for ZnO thin-film semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors

Yu-ning

et al. 2009

J. Mater. Chem.

109

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Section: Introductionmentioning

confidence: 99%

Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors

Yu-ning

et al. 2009

J. Mater. Chem.

109

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“…Noteworthy results have been reported for flat-panel display applications; 1,2) however, all of these TFTs were n-channel. This is because almost all reliable oxide semiconductors, such as indium zinc gallium oxide (IGZO), 3,4) zinc oxide (ZnO), 5,6) and zinc tin oxide (ZTO), 7,8) have n-type semiconducting properties.…”

mentioning

confidence: 99%

p-Channel Tin Monoxide Thin Film Transistor Fabricated by Vacuum Thermal Evaporation

Lee

Kim

2010

Jpn. J. Appl. Phys.

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By using tin monoxide films, p-channel oxide semiconductor thin film transistors were fabricated with a bottom-gate and bottom-contact structure. A p-type tin monoxide semiconductor thin film was obtained from tin monoxide powder by vacuum thermal evaporation. The as-deposited film showed an amorphous phase, and a polycrystalline tin monoxide was obtained by thermal annealing after the deposition. The hole concentration was on the order of 10 17 cm À3 , and the Hall mobility was 2.83 cm 2 V À1 s À1 . The resulting on-current/off-current ratio was more than 10 2 , and the field-effect mobility was approximately 4 Â 10 À5 cm 2 V À1 s À1 . #

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“…Nevertheless, working oxide semiconductor-based TFTs were already obtained from low temperature sputtered SiO 2 , 5 ferromagnetic materials such as Bi 1.5 Zn 1.0 Nb 1.5 O 7 with MgO capping layers, 21 and high-dielectrics such as Y 2 O 3 , 22,23 Al 2 O 3 , 24 HfO 2 , 25 and Ta 2 O 5 . 26 Given that the substrate/film bombardment can be a problem in sputtering, materials with a high are desirable because their added capacitance can compensate for the higher density of interface traps and thus improve the transistor performance, namely, decrease the subthreshold slope ͑S͒ and the operating voltage. 27 However, some of these dielectrics, especially the higher-ones, present a polycrystalline structure even if deposited at room temperature, whereas an amorphous structure is preferred because grain boundaries act as preferential paths for impurity diffusion and leakage current, resulting in an inferior dielectric reliability.…”

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confidence: 99%

Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics

Barquinha

Pereira

Gonçalves

et al. 2009

J. Electrochem. Soc.

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High performance transparent thin-film transistors deposited on glass substrates and entirely processed at a low temperature not exceeding 150°C are presented and analyzed in this paper. Besides being based on an amorphous oxide semiconductor, the main innovation of this work relies on the use of sputtered multicomponent oxides as dielectric materials based on mixtures of Ta 2 O 5 with SiO 2 or Al 2 O 3 . These multicomponent dielectrics allow to obtain amorphous structures and low leakage currents while preserving a high dielectric constant. This results in transistors with remarkable electrical properties, such as field-effect mobility exceeding 35 cm 2 V −1 s −1 , close to 0 V turn-on voltage, on/off ratio higher than 10 6 , and a subthreshold slope of 0.24 V decade −1 , obtained with a Ta 2 O 5 :SiO 2 dielectric. When subjected to severe current stress tests, optimized devices show little and reversible variation in their electrical characteristics. The devices presented here have properties comparable to the ones using plasma-enhanced chemical vapor deposited SiO 2 at 400°C, reinforcing the success of this amorphous multicomponent dielectric approach for low temperature, high performance, and transparent electronic circuits.Transparent electronics is one of the most fascinating and fastgrowing research areas since the first fully transparent thin-film transistors ͑TFTs͒ based on ZnO were presented in 2003. 1 A significant effort has been made in enhancing the devices' performance and lowering their maximum processing temperature 2 down to at least 150°C because this is normally seen as the upper limit for the socalled low temperature electronics, where low cost and flexible substrates are used. More recently, it was proved that multicomponent amorphous oxide semiconductors based on combinations of metallic cations with a ͑n − 1͒d 10 ns 0 ͑n Ն 4͒ electronic configuration, such as gallium indium zinc oxide ͑GIZO͒, 3-6 provide an enhanced performance over single binary oxides. Besides that, due to their amorphous structure, these materials also allow lower processing temperature, improved reproducibility and uniformity in large areas, and smoother surfaces when compared with polycrystalline materials. 7,8 The TFTs based on amorphous oxide semiconductors present remarkable characteristics, even when postprocessing temperatures of only 150°C are used. 3 However, most of the times the overall maximum processing temperature of these devices is much higher than 150°C and is dictated by the nature and the fabrication process of the dielectric layer. Most of the oxide semiconductor based TFTs rely on conventional dielectrics from Si technology, such as plasmaenhanced chemical vapor deposited ͑PECVD͒ SiO 2 9,10 and SiN x :H, 11,12 or even thermally grown SiO 2 when Si wafers are used as substrates. 3,13,14 While good performance can be obtained with these dielectrics when processed above 250-300°C, their properties are degraded when a temperature of around 150°C is established as the maximum for transistor fabrication....

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Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer

Cited by 16 publications

References 13 publications

Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors

Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors

p-Channel Tin Monoxide Thin Film Transistor Fabricated by Vacuum Thermal Evaporation

Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics

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