2007
DOI: 10.1021/jp0740548
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Fabrication and Red-Color Lasing of Individual Highly Uniform Single-Crystal CdSe Nanobelts

Abstract: Highly uniform single-crystal CdSe nanobelts were prepared via a simple thermal evaporation route. Photoluminescence (PL) from a single belt indicates that the obtained nanostructures can produce stable and ultrafine red-color lasing under pulsed light excitation. The corresponding PL decay profiles show that the PL lifetime under high excitation is sharply shortened compared to that at low excitation power, which further supports that the PL in the nanobelt cavities can realize resonance and give stimulated e… Show more

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Cited by 34 publications
(27 citation statements)
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“…Since these early works, the library of nanowire laser materials has expanded enormously, resulting in nanolasers that emit in the UV, the visible, and the near-IR. This wide range in emission wavelengths can be seen in demonstrations for ZnO, 15,18,30 GaN, 17,26 InGaN, 32 CdS, 33 CdSe, 34 CdSSe, 35 GaAs, 36 InGaAs, 37 AlGaAs, 38 ZnS, 39 CdSe, 34 GaSb, 40 and InP. 41,42 New Nanowire Laser Cavity Structures…”
Section: Semiconductor Materials For Nanowire Lasersmentioning
confidence: 82%
“…Since these early works, the library of nanowire laser materials has expanded enormously, resulting in nanolasers that emit in the UV, the visible, and the near-IR. This wide range in emission wavelengths can be seen in demonstrations for ZnO, 15,18,30 GaN, 17,26 InGaN, 32 CdS, 33 CdSe, 34 CdSSe, 35 GaAs, 36 InGaAs, 37 AlGaAs, 38 ZnS, 39 CdSe, 34 GaSb, 40 and InP. 41,42 New Nanowire Laser Cavity Structures…”
Section: Semiconductor Materials For Nanowire Lasersmentioning
confidence: 82%
“…This concludes that the lasing process requires a minimum diameter for sufficient waveguide confinement. 20 After the first demonstration of ZnO nanowire-based nanolasers, other semiconductor nanowirebased lasers were soon demonstrated including GaN (Figure 2 d-g), 28,[30][31][32] InGaN, 33 CdS, 34 CdSe, 35,36 CdSSe, 8 GaAs, 37 InGaAs, 38 AlGaAs, 39 ZnS, 40 GaSb, 41 and InP. 42 Furthermore, ultraviolet lasing from an epitaxially-grown AlGaN/GaN core/shell heterostructure was demonstrated.…”
Section: Semiconducting Nanowires For Light Generation and Bandgap Tumentioning
confidence: 99%
“…Interestingly, only the mike-like nanorods showed an excitonic band emission peaked at ∌704 nm with a full width at half-maximum of ∌45 nm, which slightly blue-shifted from that of bulk CdSe (1.74 eV). 40,41 In contrast, no PL peaks were observed for dumbbell-like nanorods or toothbrush-like nanorods. It has been demonstrated that the strong interaction between exciton and plasmon states in a metal−semiconductor hybrid nanostructure can result in either enhancement or quenching in PL.…”
mentioning
confidence: 94%