Fabrication and thermal-chemical stability of magnetoresistive random-access memory cells using α-Fe/sub 2/O/sub 3/ bottom spin valves

Bae, Seongtae; Zürn, S.; Egelhoff, William F.; Chen, P.J.; Sheppard, L.; Torok, E. J.; Judy, J.

doi:10.1109/20.966133

Cited by 8 publications

(7 citation statements)

References 17 publications

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“…By utilizing this film technology, it is possible to improve the physical properties of iron oxides, allowing for the realization of more multifunctional devices utilizing iron oxides. For example, owing to its efficient spin switching, α-Fe 2 O 3 thin film may be used in memory devices. − Additionally, by utilizing the novel properties of α-Fe 2 O 3 thin films, such as skyrmions, they could be used as skyrmion-based memory devices, among other things. Numerous applications of iron oxide thin film are possible to realize through the use of various thin film fabrication techniques.…”

Section: Iron Oxide Thin Filmmentioning

confidence: 99%

“…The incorporation of an antiferromagnets layer is critical for exchange bias and magnetization pinning of a ferromagnetic layer in spintronic devices such as magnetic read heads and nonvolatile memories. ,, Among numerous antiferromagnetic materials, α-Fe 2 O 3 shows high thermal and chemical stability which is suitable as a bottom layer of giant magnetoresistance (GMR) spin valves compared to other antiferromagnetic layers . High thermal and chemical stability are important to obtain high-efficiency spintronics devices.…”

Section: Applications Of Iron Oxide Thin Filmmentioning

confidence: 99%

“…The magnetoresistance ratio of a spin-valves-based α-Fe 2 O 3 layer is about 6.1%, higher than the spin-valves-based Fe–Mn or Ni–Mn layer due to the high resistivity of α-Fe 2 O 3 . The magnetoresistance ratio of the spin-valves utilizing α-Fe 2 O 3 layer also could be increased further by modifying the spin-valves layer using additional layers such as Co layer, etc., and/or choosing a proper configuration of ferromagnetic layers. − …”

Section: Applications Of Iron Oxide Thin Filmmentioning

confidence: 99%

See 2 more Smart Citations

Crafting a Next-Generation Device Using Iron Oxide Thin Film: A Review

Amrillah

Abdullah

Sari

et al. 2021

Crystal Growth & Design

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Despite extensive research into novel materials, iron oxides remain fascinating and attract considerable attention because of their versatility, stability, ease of fabrication, low cost, natural abundance, and environmental friendliness. Because of their wealth of magnetic, optical, and electrical properties, iron oxides are particularly multifunctional materials that can be integrated into various devices. In this article, we will discuss the applications of iron oxide thin films in electronics (spintronics devices), energy (batteries and solar cells or photovoltaics), and sensors (gas, humidity, strain, biosensors, and so on). We begin with the most recent forms and fabrication methods for iron oxide thin film, as well as a fundamental understanding of the material. Additionally, the application constraints of these devices are discussed, and the challenges, solutions, and prospects for electronic devices based on iron oxide are outlined.

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Section: Iron Oxide Thin Filmmentioning

confidence: 99%

Section: Applications Of Iron Oxide Thin Filmmentioning

confidence: 99%

Section: Applications Of Iron Oxide Thin Filmmentioning

confidence: 99%

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Crafting a Next-Generation Device Using Iron Oxide Thin Film: A Review

Amrillah

Abdullah

Sari

et al. 2021

Crystal Growth & Design

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“…The 1-Mb MRAM based on the PSV technology has been successfully fabricated through the collaboration between USTC and National Chiao Tung University (NCTU), Hsin-chu, Taiwan, R.O.C. The nano oxide layer (NOL) technology [14], [15] is critical to fabricate this device. This approach enables USTC to be a pioneering MRAM manufacturer to offer MRAM products to the users.…”

Section: B Magnetic Tunnel Junction Technologymentioning

confidence: 99%

The highlights in the nano world

Chang

2003

Proc. IEEE

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In this highlight paper, the key structures and devices in nanoelectronics and spintronics are described. The successful realization of magnetic RAM (MRAM) by using nanotechnology has been demonstrated through the integration of 1-Mb chip. In this design, the pseudo spin valve (PSV) technology has been applied. Key quantum devices like quantum dot surface emitting lasers, quantum dot intersubband detectors, and molecular electronics are presented. In the emergent nanobiotechnology, nanodevices fabricated by using biotechnology and nanobiomedical applications using nanoparticles have been addressed. Since universities play important roles in both research and education, innovative nanotechnology education efforts in universities such as the National Nanotechnology Infrastructure Network have been described. Finally, the leading role of the IEEE in promoting worldwide nanotechnology research and education is addressed and future advances in nanotechnology are expected.

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“…The material has intriguing characteristics and has therefore been suggested for use in many types of technologies, such as magnetic and electronic devices, 3 sensor devices, 4,5 batteries, 6 hydrogen production, 7 photoelectrochemical applications, 8,9 and nanotechnology applications. [10][11][12] This broad range of applications has motivated investigations to understand the fundamental material properties.…”

Section: Introductionmentioning

confidence: 99%

Effects of native defects on the structural and magnetic properties of hematiteα-Fe2O3

2013

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Antiferromagnetic and ferromagnetic configurations of hematite α-Fe 2 O 3 structures have been investigated by first-principles methods, which have been used to theoretically analyze the local structural and magnetic effects due to the presence of interstitial atoms such as hydrogen and oxygen. This study is based on the projectoraugmented wave method within the local spin density approximation (LSDA) in addition to an on-site Coulomb correction of the Fe d orbitals (i.e., the LSDA + U SIC method). The results demonstrate that this correction potential is important in achieving an accurate description of both the structural and the magnetic properties of α-Fe 2 O 3 . The ground state of α-Fe 2 O 3 is the antiferromagnetic phase. The presence of oxygen vacancies, interstitial oxygen, and an interstitial hydrogen decreases the local Fe magnetic moment |M s (Fe)| in both the ferroand antiferromagnetic phases, although the hydrogen has a rather modest effect. The density of states calculations demonstrate that the presence of interstitial atoms and defects yields a small reduction in the material's electronic gap.

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Fabrication and thermal-chemical stability of magnetoresistive random-access memory cells using α-Fe/sub 2/O/sub 3/ bottom spin valves

Cited by 8 publications

References 17 publications

Crafting a Next-Generation Device Using Iron Oxide Thin Film: A Review

Crafting a Next-Generation Device Using Iron Oxide Thin Film: A Review

The highlights in the nano world

Effects of native defects on the structural and magnetic properties of hematiteα-Fe2O3

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