Fabrication and tribological behavior of sputtering TaN coatings

Liu, Kun-Yuan; Lee, Jyh-Wei; Wu, Fan‐Bean

doi:10.1016/j.surfcoat.2014.03.024

Cited by 46 publications

(16 citation statements)

References 31 publications

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“…The ratios of H/E [36,37,38] and H/E* [4,39] denote elastic strain to failure, which assisted to assess the wear resistance of hard coatings with the criteria of H/E > 0.1 [38] and H/E* > 0.1 [39]. Figure 10 depicts the relationship between H and E* in which the data of the batches A, B, and C prepared at the ground state were classified as reported in Ref.…”

Section: Resultsmentioning

confidence: 99%

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

et al. 2019

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Zr–Si–N films with atomic ratios of N/(Zr + Si) of 0.54–0.82 were fabricated through high-power impulse magnetron sputtering (HiPIMS)–radio-frequency magnetron sputtering (RFMS) cosputtering by applying an average HiPIMS power of 300 W on the Zr target, various RF power levels on the Si target, and negative bias voltage levels of 0–150 V connected to the substrate holder. Applying a negative bias voltage on substrates enhanced the ion bombardment effect, which affected the chemical compositions, mechanical properties, and residual stress of the Zr–Si–N films. The results indicated that Zr–Si–N films with Si content ranging from 1.4 to 6.3 atom % exhibited a high hardness level of 33.2–34.6 GPa accompanied with a compressive stress of 4.3–6.4 GPa, an H/E* level of 0.080–0.107, an H3/E*2 level of 0.21–0.39 GPa, and an elastic recovery of 62–72%.

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Section: Resultsmentioning

confidence: 99%

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

et al. 2019

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“…Quantum-mechanical DFT calculations identified The measured indentation hardness reached up to [31][32][33][34] GPa. Phonon calculations further revealed that the MoN 0.5 /TaN structural candidate is the only one that is vibrationally stable.…”

Section: Discussionmentioning

confidence: 99%

Point-defect engineering of MoN/TaN superlattice films: A first-principles and experimental study

et al. 2020

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Superlattice architecture represents an effective strategy to improve performance of hard protective coatings. Our model system, MoN/TaN, combines materials well-known for their high ductility as well as a strong driving force for vacancies. In this work, we reveal and interpret peculiar structure-stability-elasticity relations for MoN/TaN combining modelling and experimental approaches. Chemistry of the most stable structural variants depending on various deposition conditions is predicted by Density Functional Theory calculations using the concept of chemical potential. Importantly, no stability region exists for the defect-free superlattice. The X-ray Diffraction and Energy-dispersive X-ray Spectroscopy experiments show that MoN/TaN superlattices consist of distorted fcc building blocks and contain non-metallic vacancies in MoN layers, which perfectly agrees with our theoretical model for these particular deposition conditions. The vibrational spectra analysis together with the close overlap between the experimental indentation modulus and the calculated Young's modulus points towards MoN0.5/TaN as the most likely chemistry of our coatings. arXiv:1905.04155v1 [cond-mat.mtrl-sci]

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“…PVD reactive sputtering technique has been extensively employed for the synthesis of transition metal nitrides. Tantalum nitride thin films have been synthesized by magnetron sputtering using a Ta target in a N 2 /Ar gas mixture and different deposition parameters . So far, it is well known that for metal nitrides the deposition rate, chemical composition and crystalline structure of deposited films strongly depend on N 2 /Ar ratio and flow rate in the growth chamber as well as on the substrate temperature during deposition.…”

Section: Introductionmentioning

confidence: 99%

“…Tantalum nitride thin films have been synthesized by magnetron sputtering using a Ta target in a N 2 /Ar gas mixture and different deposition parameters. [4,9,10,[15][16][17][18][19][20] So far, it is well known that for metal nitrides the deposition rate, chemical composition and crystalline structure of deposited films strongly depend on N 2 /Ar ratio and flow rate in the growth chamber as well as on the substrate temperature during deposition. It is also known, that varying the substrate temperature induces changes in the crystalline structure of the deposited films.…”

Section: Introductionmentioning

confidence: 99%

Influence of substrate temperature and N₂/Ar flow ratio on the stoichiometry, structure and hardness of TaNx coatings deposited by DC reactive sputtering

Valdez

Espinosa-Arbeláez

García-Herrera

et al. 2015

Surface & Interface Analysis

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The effect of substrate temperature and N2/Ar flow ratio on the stoichiometry, structure and hardness of TaNx coatings prepared on (111) Si substrates by DC reactive sputtering was investigated. For the structural, chemical and morphological analysis, X‐ray diffraction (XRD), Auger electron scanning and atomic force microscopy were respectively used. Hardness values of thin films were determined using the work of indentation model from nanoindentation measurements. TaN stoichiometric coatings were obtained for samples deposited at room temperature. The stoichiometric TaN phase was not obtained by increasing the temperature up to 773 K, even when increasing the N2/Ar flow ratio. Even when a saturation in nitrogen content was achieved, nitrogen vacancies are still present in those samples. For coatings prepared at 773 K and low N2/Ar flow ratio, a phase mixture between TaNx and cubic α‐Ta was observed, while a cubic structure δ‐TaN was formed by increasing the N2/Ar flow ratio. A maximum in hardness and (38 GPa) was obtained for the sample deposited at 773 K and a N2/Ar flow ratio of 0.2, which presented a δ‐TaN cubic crystalline structure and a roughness value of 1.6 nm. Copyright © 2015 John Wiley & Sons, Ltd.

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Fabrication and tribological behavior of sputtering TaN coatings

Cited by 46 publications

References 31 publications

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

Point-defect engineering of MoN/TaN superlattice films: A first-principles and experimental study

Influence of substrate temperature and N₂/Ar flow ratio on the stoichiometry, structure and hardness of TaNx coatings deposited by DC reactive sputtering

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Fabrication and tribological behavior of sputtering TaN coatings

Cited by 46 publications

References 31 publications

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

Point-defect engineering of MoN/TaN superlattice films: A first-principles and experimental study

Influence of substrate temperature and N2/Ar flow ratio on the stoichiometry, structure and hardness of TaNx coatings deposited by DC reactive sputtering

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Influence of substrate temperature and N₂/Ar flow ratio on the stoichiometry, structure and hardness of TaNx coatings deposited by DC reactive sputtering