Fabrication and visible emission of single-crystal diameter-modulated gallium phosphide nanochains

Liu, Fu; Chen, Huajun; Zou, Jin; Cong, Huai‐Ping; Lu, G. Q.

doi:10.1063/1.3452378

Cited by 13 publications

(11 citation statements)

References 39 publications

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“…Gallium Phosphide is a compound semiconductor material with an indirect band gap of 2.2 eV at (300 K) [1,2]. It is zinc blend structured possess strong visible emission around 700 nm at room temperature and it is used in the manufacture of low-case red, orange and green light emitting diodes (LEDs) and semiconductor lasers can be made that emit in the visible spectrum, or even produce ultraviolet emission [3].…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure of Gallium Phosphide Nanocrystals Core and (001)-(1 × 1) Oxidized Surface

Abdulsattar¹,

Hussein²,

Jamal³

et al. 2012

AMPC

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The electronic structure of III-V zinc blend Gallium Phosphide nanocrystals is investigated using ab-initio density functional theory coupled with large unit cell for the core and surface parts. Two kinds of cells are investigated: multiple Bravais and multiple primitive cells. The results show that both energy gap and valence band width depend on the shape of the nanocrystal. Results also revealed that most electronic properties converge to some limit as the size of the large unit cell increases. Furthermore, the results have shown that the cohesive energy is decreasing with increasing size of nanocrystals. The core part is more degenerate, with larger energy gap and smaller valance and conduction bands than the surface.

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Section: Introductionmentioning

confidence: 99%

Electronic Structure of Gallium Phosphide Nanocrystals Core and (001)-(1 × 1) Oxidized Surface

Abdulsattar¹,

Hussein²,

Jamal³

et al. 2012

AMPC

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“…Fabrication of cross-section modulated nanowires (MNWs) with layer thickness from several ML up to several nanometers is still a technological challenge. However, recent reports of fabrication of InP, InN/InGaN or metallic MNWs [40][41][42][43][44] suggest that nanostructures considered in this work are feasible.…”

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confidence: 99%

Thermal conductivity inhibition in phonon engineered core-shell cross-section modulated Si/Ge nanowires

Nika

Cocemasov

Crismari

et al. 2013

Applied Physics Letters

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We have shown theoretically that a combination of cross-section modulation and acoustic mismatch in the core-shell Si/Ge nanowires can lead to a drastic reduction of the thermal conductivity. Our calculations, which utilized two different models -five-parameter Bornvon Karman and six-parameter valence-force field -for the lattice vibrations, indicate that the room temperature thermal conductivity of Si/Ge cross-section modulated nanowires is almost three orders of magnitude lower than that of bulk Si. Thermal flux in the modulated nanowires is suppressed by an order of magnitude in comparison with generic Si nanowires.The effect is explained by modification of the phonon spectra in modulated nanowires leading to decrease of the phonon group velocities and localization of certain phonon modes in narrow or wide nanowire segments. The thermal conductivity inhibition is achieved in nanowires without additional surface roughness and, thus, potentially reducing degradation of the electron transport. Our results suggest that the acoustically mismatched cross-section modulated nanowires are promising candidates for thermoelectric applications.

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“…15,16 Raman measurements taken at several locations on the sample showed variations in the relative amplitudes of the TO and LO peaks, as well as small shifts in the peak frequencies, which can easily be explained by the microcrystallinity of the sample.…”

Section: Resultsmentioning

confidence: 97%

Chemical Vapor Deposition of GaP and GaAs Thin Films From [ⁿBu₂Ga(μ-E^tBu₂)₂GaⁿBu₂] (E = P or As) and Ga(P^tBu₂)₃

et al. 2011

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Low pressure chemical vapor deposition (LPCVD) using the single-source precursors [ n Bu 2 Ga(μ-E t Bu 2 ) 2 Ga n Bu 2 ] (E = P or As) in the temperature range 723−823 K (0.05 mmHg), gives shiny yellow or silvery gray films of GaP and GaAs, respectively, on silica. The composition and morphology of the deposited materials have been probed via X-ray diffraction (XRD), scanning electron microscopy/energy-dispersive X-ray (SEM/EDX), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and Raman spectroscopy, revealing crystalline (cubic) GaE with 1:1 Ga/E ratios. The GaP forms nanorods growing perpendicular to the substrate surface and is rougher than the GaAs, which appears to form smaller, densely packed microcrystallites. While the GaAs films produced in this way did not exhibit any significant luminescence, the reflective GaP films obtained by LPCVD were of good electronic quality, revealing photoluminescence comparable to that of a single crystalline GaP reference. LPCVD using Ga(P t Bu 2 ) 3 gives GaP, although this appears to be an inferior reagent compared to the dimer. Unlike the corresponding [ n Bu 2 In(μ-E t Bu 2 ) 2 In n Bu 2 ] dimers (see Aksomaityte et al., Chem. Mater. 2010, 22, 4246) which gave InE films and nanowires from supercritical chemical fluid deposition in sc-CO 2 /hexane, under the same conditions (773 K, 12 MPa), the gallium dimer precursors mostly failed to give GaE. Instead significant carbon deposition occurred, indicating solvent degradation.

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Fabrication and visible emission of single-crystal diameter-modulated gallium phosphide nanochains

Cited by 13 publications

References 39 publications

Electronic Structure of Gallium Phosphide Nanocrystals Core and (001)-(1 × 1) Oxidized Surface

Electronic Structure of Gallium Phosphide Nanocrystals Core and (001)-(1 × 1) Oxidized Surface

Thermal conductivity inhibition in phonon engineered core-shell cross-section modulated Si/Ge nanowires

Chemical Vapor Deposition of GaP and GaAs Thin Films From [ⁿBu₂Ga(μ-E^tBu₂)₂GaⁿBu₂] (E = P or As) and Ga(P^tBu₂)₃

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Fabrication and visible emission of single-crystal diameter-modulated gallium phosphide nanochains

Cited by 13 publications

References 39 publications

Electronic Structure of Gallium Phosphide Nanocrystals Core and (001)-(1 &#215; 1) Oxidized Surface

Electronic Structure of Gallium Phosphide Nanocrystals Core and (001)-(1 &#215; 1) Oxidized Surface

Thermal conductivity inhibition in phonon engineered core-shell cross-section modulated Si/Ge nanowires

Chemical Vapor Deposition of GaP and GaAs Thin Films From [nBu2Ga(μ-EtBu2)2GanBu2] (E = P or As) and Ga(PtBu2)3

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Electronic Structure of Gallium Phosphide Nanocrystals Core and (001)-(1 × 1) Oxidized Surface

Electronic Structure of Gallium Phosphide Nanocrystals Core and (001)-(1 × 1) Oxidized Surface

Chemical Vapor Deposition of GaP and GaAs Thin Films From [ⁿBu₂Ga(μ-E^tBu₂)₂GaⁿBu₂] (E = P or As) and Ga(P^tBu₂)₃