2016
DOI: 10.1109/tns.2015.2505059
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Fabrication and X-Ray Excited Luminescence of Ga- and In-Doped ZnO Nanorods

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Cited by 9 publications
(2 citation statements)
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“…In order to meet demands for fast X-ray imaging detectors, the scintillator screens must have fast decay time properties. Although the NBE UV emission in ZnO is known to have superfast sub-nanosecond ultraviolet luminescence, the VE still satisfies the condition of a fast X-ray detector with its nanosecond-scale decay time 35 , 36 , 61 . The room temperature time resolved PL (TRPL) technique was used to determine the decay time response.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In order to meet demands for fast X-ray imaging detectors, the scintillator screens must have fast decay time properties. Although the NBE UV emission in ZnO is known to have superfast sub-nanosecond ultraviolet luminescence, the VE still satisfies the condition of a fast X-ray detector with its nanosecond-scale decay time 35 , 36 , 61 . The room temperature time resolved PL (TRPL) technique was used to determine the decay time response.…”
Section: Resultsmentioning
confidence: 99%
“…Xu et al 34 have grown ZnO NRs with 2 µm thickness for X-ray imaging applications. Li et al 35 , 36 have developed hydrothermally grown doped ZnO micro/nano arrays to generate strong VE spectra in the range of 450–700 nm. They found that Ga and In doped ZnO micro/nano arrays exhibited a superior X-ray excited luminescence performance, which serves as a key indicator for high-spatial-resolution, fast X-ray imaging.…”
Section: Introductionmentioning
confidence: 99%