Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

Abstract

a b s t r a c tWe have prepared (111)-oriented Si layers on SiO 2 (fused silica) substrates from amorphous-Si(a-Si)/Al or Al/a-Si stacked layers using an aluminum-induced crystallization (AIC) method. The X-ray diffraction (XRD) intensity from the (111) planes of Si was found to depend significantly on growth conditions such as the thicknesses of Si and Al, deposition order (a-Si/Al or Al/a-Si on SiO 2 ), deposition technique (sputtering or vacuum evaporation) and exposure time of the Al layer to air before the deposition of Si.The crystal orientation of the Si layers was confirmed by yÀ2y, 2y XRD and electron backscatter diffraction (EBSD). The photoresponse properties of semiconducting BaSi 2 films formed on the (111)-oriented Si layers by the AIC method were measured at room temperature. Photocurrents were clearly observed for photon energies greater than 1.25 eV. The external quantum efficiencies of the BaSi 2 were also evaluated.

Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization

“…In the case of Si, isothermal annealing of amorphous Si (a-Si)/Al layers on glass at temperatures below the eutectic temperature (577 1 C) results in layer exchange and formation of a continuous polycrystalline Si thin film [2][3][4][5].The preferential growth orientation is known to be either /1 0 0S or /1 1 1S depending on growth conditions [6][7][8][9].…”

Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum‐Induced Crystallization

“…In this study, we demonstrate a straightforward, highly scalable process for the growth of large grain, c‐axis textured GaN films that is applicable to a variety of amorphous and polycrystalline substrates. The process employs a thin (≈30 nm) Si (111) template layer with grain sizes of 30–40 μm formed by aluminum‐induced crystallization (AIC) of amorphous Si at 400–500 °C. These layers are formed on fused quartz, thermally oxidized Si (001), and polycrystalline diamond substrates.…”

Silicon nanowire growth on poly‐silicon‐on‐quartz substrates formed by aluminum‐induced crystallization

“…The quality of the Al 2 O 3 can also be influenced by the Al deposition process. For example, Tsukada et al suggested that sputter deposition of Al leads to a rough surface which, in turn, reduces the thickness uniformity of the Al 2 O 3 layer . The Al 2 O 3 /Al layer is then coated with an a‐Si layer with a thickness equal to or less than thickness of the Al layer to ensure that a smooth poly‐Si layer is produced.…”