Fabrication of 120-nm-channel-length ferroelectric-gate thin-film transistor by nanoimprint lithography

Abstract

Nanoimprint lithography (NIL) is one of the most promising device fabrication techniques because it has a high resolution and moderate fabrication cost. Oxide-based thin-film transistors (TFTs) with various physical properties have the potential to outperform Si-based large-scale integration (LSI) devices. In this study, we focus on the miniaturization of oxide-based TFTs by NIL. A ferroelectric-gate thin-film transistor (FGT) was prepared by incorporating a chemical-solution-deposition (CSD)-processed indium tin oxide channel, a Pb(Zr,Ti)O3 (PZT) gate insulator, and sputtered Pt electrodes. The Pt source–drain electrodes and ITO channel were patterned by the NIL process. The results show that we successfully fabricated an FGT with a channel length of 120 nm by NIL. The 120 nm channel length was confirmed by scanning electron microscopy (SEM). The fabricated NIL-FGT showed typical n-channel transistor characteristics. The obtained ON/OFF current ratio, threshold voltage, subthreshold voltage, and field-effect mobility were 103, 0.5 V, 1.0 V/decade, and 0.1–0.2 cm2·V−1·s−1, respectively.

Nickel stamp origination from generic SU-8 nanostructure arrays patterned with improved thermal development and reshaping

“…Among many different technologies capable of building complex nano-architectures for a myriad of applications with paramount importance, such as integrated circuits [1][2][3][4], photovoltaics [5,6], plasmonic structural colors [7][8][9][10][11][12][13][14], optical data storage [15][16][17][18] and flexible optoelectronic devices [19], NIL has stood out as an increasingly enticing method, which allows for mass-production of devices by roll-to-roll (R2R) printing. In NIL, which is a high-throughput, and rapid nano-patterning technology, realization of precisely defined nanoscale metasurfaces on the stamp has an integral role in determining the resultant pattern quality [2,5,[19][20][21][22][23][24].…”

Rheology printing of an ultra-fine conductive Ru–La–O line

“…9 This method may be used to fabricate well-defined and clear-edged metal-oxide patterns of sizes < 1 µm. Whereas conventional nanoimprint lithography (NIL) uses a photoresist process for patterning, [10][11][12] the n-RP method can form an oxide gel pattern directly by thermal © 2016. This manuscript version is made available under the Elsevier user license http://www.elsevier.com/open-access/userlicense/1.0/ imprinting.…”