Fabrication of 20.19% Efficient Single-Crystalline Silicon Solar Cell with Inverted Pyramid Microstructure

Zhang, Chunyang; Chen, Lingzhi; Zhu, Ying‐Jie; Guan, Zisheng

doi:10.1186/s11671-018-2502-9

Cited by 34 publications

(22 citation statements)

References 36 publications

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“…Inverted pyramid (IP) as an attractive light-trapping structure has attracted considerable attention due to its superior antireflection effect and structural characteristics [1][2][3][4][5][6][7]. To be specific, the incoming short-wavelength light in silicon (Si) IP undergoes triple or more bounces before being reflected away, possessing one or more bounces than that in traditional upright pyramids [7][8][9]. Meanwhile, this inverted pyramid-structured Si will avoid severe recombination losses faced by the nanostructured black Si [10][11][12][13][14][15][16] because of its big and open structural characteristic.…”

Section: Introductionmentioning

confidence: 99%

“…By utilizing Cu nanoparticles to catalyze chemical etching of Si, Yang et al [8] have achieved 18.87% efficient IP-structured Si solar cells with a large area. Zhang et al [9] have fabricated sc-Si solar cell with IP microstructure by modulated alkaline texturing combined with an optimized MACE method and have achieved a 20.19% efficient 1-μm-sized IP-textured device with a large area. So far, the performances of Si IP solar cell with a large area are not yet satisfied suffering from the large-area uniformity of IP morphology, the control of the IP feature size, and the passivation of the device.…”

Section: Introductionmentioning

confidence: 99%

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High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells

Gao¹,

Liu²,

Fan³

et al. 2020

Nanoscale Res Lett

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Surface texturing is one of the most important techniques for improving the performance of photovoltaic (PV) device. As an appealing front texture, inverted pyramid (IP) has attracted lots of research interests due to its superior antireflection effect and structural characteristics. In this paper, we prepare high-uniform silicon (Si) IPs structures on a commercial monocrystalline silicon wafer with a standard size of 156 × 156 mm 2 employing the metal-assisted chemical etching (MACE) and alkali anisotropic etching technique. Combining the front IPs textures with the rear surface passivation of Al 2 O 3 /SiN x , we fabricate a novel Si IP-based passivated emitter and rear cell (PERC). Benefiting from the optical superiority of the optimized IPs and the improvement of electrical performance of the device, we achieve a high efficiency of 21.4% of the Si IP-based PERC, which is comparable with the average efficiency of the commercial PERC solar cells. The optimizing morphology of IP textures is the key to the improvement of the short circuit current I sc from 9.51 A to 9.63 A; meanwhile, simultaneous stack SiO 2 /SiN x passivation for the Si IP-based n + emitter and stack Al 2 O 3 /SiN x passivation for rear surface guarantees a high opencircuit voltage V oc of 0.677 V. The achievement of this high-performance PV device demonstrates a competitive texturing technique and a promising prospect for the mass production of the Si IP-based PERC.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells

Gao¹,

Liu²,

Fan³

et al. 2020

Nanoscale Res Lett

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show abstract

“…Moreover, some achieves have shown that nanostructure with gradually changed sidewall profiles can effectively improve the optical performance of the solar cells [19]- [22]. Guan Zisheng et al made an inverted pyramid structured c-Si solar cell by controlling the metal assisted chemical etching process, which improved the Jsc by 0.22 mA/cm 2 when comparing with the best positive pyramid structured c-Si solar cell [20]. Fan Zhiyong et al used the pre-imprinting anodization AAO (PIA-AAO) process to prepare amorphous silicon solar cells on nano-cone plastic substrates, the light trapping efficiency reached as high as two folds of the similar planar devices [21].…”

Section: Introductionmentioning

confidence: 99%

Sidewall Profile Dependent Nanostructured Ultrathin Solar Cells With Enhanced Light Trapping Capabilities

Sun

Liu

et al. 2020

IEEE Photonics J.

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Theoretical studies of ultra-thin silicon solar cells with cylindrical, conical and parabolic surface nanostructures inherited from natural self-assembled anodic alumina oxide (NSA-AAO) were performed by finite-difference time-domain (FDTD) method. All nanostructured solar cells obtained an optimized efficiency enhancement as high as more than 33% comparing with that of the anti-reflective (AR) one. Numerical results reveal that the range of efficient structural parameters for the nanostructured (e.g., cylindrical) solar cell can be effectively enlarged as the period of the nanostructure changes from 0.1 μm to 0.5 μm. Moreover, the improvements of absorption photocurrent density (Jph) in conical and parabolic nanostructured solar cells are comparable with the cylindrical nanostructured one but less sensitive to the fill factor and structural height in the whole simulation region of 0.1-0.9 and 0-0.25 μm, respectively. Equivalent refractive index models were used to analysis the antireflection performance of surface nanostructures from the point of view of sidewall profiles. Resonance modes induced through nanostructures have greatly improved the absorptance of solar cells in broadening wavelength bands which consequently raised the Jph. This study serves as a way for the practical design and application of AAO nanostructure based high-efficiency ultra-thin solar cells.

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“…The industrial production of sc-Si solar cells is generally based on the texturization of upright pyramid structures through alkaline etching techniques to reach an average reflectivity of 10~15% [14]. But due to recent innovations, the inverted pyramid (IP) structure is being explored as a viable alternative because of its comparatively higher light trapping capability and lower specific surface area [15].…”

Section: Introductionmentioning

confidence: 99%

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

Kubendhiran

Sison

Hsu

et al. 2020

Silicon

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Inverted pyramid (IP) texturization on silicon wafers has recently attracted attention for the structure's light trapping ability and low specific surface area. The later property minimizes undesired carrier recombination for solar cells. Wet chemical etching methods based on alkaline and/or acidic etching have been found to be relatively cost effective for creating microscale IPs, and therefore have great potential for mass production. Metal catalytic chemical etching (MCCE) using acidic solutions is known to create these structures in the shortest timespan. In this work, we proposed a simple MCCE IP texturization method for (100) single crystalline silicon (sc-Si) using a Cu(SO 4 )/HF/H 2 O 2 /H 2 O solution in a bubbling bath. The experiment was performed with different etching times, concentrations of H 2 O 2 , and temperatures. As a unique design consideration, our process was conducted with a continuous flow of nitrogen gas bubbles to improve etching uniformity. Under optimized conditions, etching was demonstrated for full size wafers. In checking solution stability, it was found that hydrogen peroxide evaporation occurs throughout the entire process, significantly affecting etching rates and microstructure formation. Therefore, the continuous makeup of H 2 O 2 would be necessary for industrial production.

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Fabrication of 20.19% Efficient Single-Crystalline Silicon Solar Cell with Inverted Pyramid Microstructure

Cited by 34 publications

References 36 publications

High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells

High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells

Sidewall Profile Dependent Nanostructured Ultrathin Solar Cells With Enhanced Light Trapping Capabilities

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

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