Fabrication of 2D ordered arrays of cobalt silicide nanodots on (001)Si substrates

Self‐Assembled In‐Plane Growth of Mg2SiO4 Nanowires on Si Substrates Catalyzed by Au Nanoparticles

“…These studies are also important because of the dominant roles of these Si‐based materials in today's information technology and energy industries. There have been reports on nanostructures of metal silicides, such as CrSi 2 , TiSi 2 , FeSi 2 , CoSi 2 , MnSi 1.7 , ErSi 2 , and Cu 3 Si,3–11 which were fabricated epitaxially on Si substrates. Their morphologies usually follow the symmetry of the substrate surface, thus rendering spontaneous self‐assembly.…”

Fabrication of PECVD-grown fluorinated hydrocarbon nanoparticles and circular nanoring arrays using nanosphere lithography

“…Though, in our study, the surfaces are mostly covered by the spherical nanodots and circular rings, a few scattered triangular nanodots are also found as observed in PVD processes [10] and [16]. The 2D ordered nanostructured arrays produced by NSL mask using PVD process have extensive applications in surface plasmon sensor arrays [18], nanometre-sized magnetic domains with orientation dependent magnetic anisotropy [19] and cobalt silicide nanodots on Si(0 0 1) substrates for the applications of semiconductor devices [20]. To the best of our knowledge, no reports have been found in the literature on the fabrication or applications of ordered hydrocarbon or fluorinated hydrocarbon nanodots formation using PECVD utilizing NSL mask.…”

Two-step GISAXS characterization of NiSi2 nanoplates and Ni nanocrystals embedded in a silicon wafer covered with a silica thin film

“…The search for new methods to prepare CoSi 2 and NiSi 2 nanocrystals coherently grown in single-crystalline Si wafers has increased during recent decades because of the potential applications of these nanocomposites to several areas of nanotechnology (Cheng et al, 2007;Chung-Yang et al, 2009;Wardle et al, 2005). Owing to their rather high electrical conductivity, Co and Ni silicides can be used as contact materials in electronic devices integrated with Si (Chung-Yang et al, 2009).…”