Fabrication of 5.2% efficient Cu₂ZnSn(S,Se)₄ solar cells using DC‐sputtered metal precursors followed by sulfo‐selenization

Abstract

In this study, we report Cu2ZnSn(S,Se)4 (CZTSSe) thin films synthesized by using a rapid thermal annealing process of direct current sputtered precursors under a sulfur and selenium atmosphere. X‐ray diffraction and Raman spectroscopy investigations showed formation of CZTSSe absorber layer without any secondary phase. X‐ray fluorescence spectroscopy showed a stoichiometric absorber layer has been formed which is suitable for use in solar cells. The best thin film solar cell of CZTSSe showed a photovoltaic performance of 5.2% efficiency (Voc: 585.0 mV, Jsc: 17.0 mA/cm2 and FF: 52.0%). This is the highest efficiency reported for CZTSSe prepared from sputtered Cu/Zn/Sn precursors followed by sulfo‐selenization using powder sources. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu2ZnSn(S1–xSex)4 Thin Films

“…The intensity of the 328 cm –1 peak associated with CZTS was decreased with the increase in the Se 2– ion concentration attributed to larger ionic radii of Se 2– compared with those of S 2– , which expands the lattice cell in Cu 2 ZnSn­(S 1– x Se x ) 4 . Additionally, the enhancement in intensity of the 196 cm –1 peak was observed, which confirms the substitution of S 2– ions by Se 2– ions …”

“…Additionally, the enhancement in intensity of the 196 cm −1 peak was observed, which confirms the substitution of S 2− ions by Se 2− ions. 9 3.6. Morphological Analysis.…”

“…The Cu 2 ZnSn­(S 1– x Se x ) 4 (CZTSSe) thin films provide a high optical absorption coefficient (α) equal to the Cu­(InGa)­Se 2 (CIGS)-based solar cells. , The CZTSSe film material is a promising alternative for CIGS materials because of the cost-effectiveness of constituted elements as compared to noble metals In and Ga and similar band gap energy materials. The copper–zinc–tin sulfide Cu 2 ZnSnS 4 (CZTS), Cu 2 ZnSnSe 4 , and mixed sulfoselenide CZTSSe devices have attracted significant attention because of competitive power conversion efficiency (PCE) to conventional Si-solar cells. , The highest photovoltaic performance of the CZTS and CZTSSe-based heterojunction devices exhibited 11 and 12.6%, respectively, whereas it was 6.9% for flexible CZTSSe thin-film devices . The CZTSSe thin film shows direct band gap energy with varying (S + Se) compositions in between 1.2 and 1.5 eV, which is favorable to achieve high efficiency.…”

“…The copper−zinc−tin sulfide Cu 2 ZnSnS 4 (CZTS), Cu 2 ZnSnSe 4 , and mixed sulfoselenide CZTSSe devices have attracted significant attention because of competitive power conversion efficiency (PCE) to conventional Si-solar cells. 8,9 The highest photovoltaic performance of the CZTS and CZTSSe-based heterojunction devices exhibited 11 and 12.6%, respectively, whereas it was 6.9% for flexible CZTSSe thin-film devices. 8 The CZTSSe thin film shows direct band gap energy with varying (S + Se) compositions in between 1.2 and 1.5 eV, which is favorable to achieve high efficiency.…”